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IXYS UK Westcode have today introduced the maximal true current rating press-pack IGBT available that is set to break new ground in power handling capability of an individual device. The latest symmetric blocking device with a incessant DC rating of 2.8Kv has a unprecedented DC current of 6000A. The latest device has been aided by IXYS UK’s comprehensive expertise in making and understanding the principles of very big press-pack IGBTs with more than one parallel die. The recently developed 4.5Kv devices include vindicated SPT plus die technology and are built using 52 parallel connected IGBT die, 10 more than the biggest established part with a current rating of 2400A at the same 4.5Kv blocking voltage. Every die is 14.3mm square with an active area of nearly one centimetre squared. The latest device encapsulated in completely sealed 26mm thick with a 132mm electrode diameter, bigger than the traditional 2400A device, but keep up the similar 170mm in-total diameter as the 42 die design; this provides an effective 25% more current rating in the same package. The sturdy internal development is without bond with the single die straight away pressure contacted through metallic pressure plates to the outside copper electrodes. The outright bond free contact confirms maximum reliability and unparalleled thermal cycling properties, far exceeding those of a conventionally packaged plastic package module. In particular, the short circuit failure mode makes these devices the obvious choice for applications requiring series operation, such is the case in utilities, HVDC and very large medium voltage drives. The unrivalled current rating can also reduce the number of parallel paths required in very high current applications in the multi megawatts range. Generally, these devices are well suited to harsh environments and where maintenance access is difficult such as off-shore marine and wind. The hermetic structure and high rupture resistance are properties which are particularly relevant in harsh environments where explosive failure and plasma leak are unacceptable, such as mining, gas and oil instillation. The package design is based on IXYS UK’s proven technology, with the same conveniences of enhanced rupture capability, resisting more than ten times the short circuit energy of a conventional plastic packaged module device and the additional advantage that the device is virtually guaranteed to fail to a stable short circuit. These unique properties make the new device an ideal solution where high reliability, maximum power density and predictable failure are important. To facilitate the application of this new higher rated press-pack IGBT, IXYS UK Westcode has also launched a new complementary diode in its range of very high di/dt HP Sonic FRDs. This new diode is constructed using a new die bonding technology to maximize reliableness. Packaged in an 85mm electrode 26mm thick package the diode is pressure compatible with the press-pack IGBT so it can be mounted in the same series string for compact three level inverter configurations. Part number designations for this reverse conduction press-pack IGBTs is T2960BB45E & the compatible HP Sonic FRD is part number E3000TC45E. Typical applications for these devices include: utilities and HVDC applications such as, flexible AC transition systems, HVDC transition, Statcoms, VSC SVC etc; medium voltage AC drives for harsh environments and ultra-high power, such as mining, marine and off shore g, gas and oil installations; renewable energy for wind turbines, hydro generation, wave generation and solar; plus, any application where high power density and reliableness is necessary. Read more >>

Prior to the evolution of the IGBT, power electronics engineers had two kinds of devices for fast and higher frequency switching – the Bipolar Junction Transistor (BJT) and the Metal Oxide Field Effect Transistor (MOSFET). Both could switch at higher frequencies than Thyristors (or SCRs). However, either had some limits. MOSFETS provided high switching speeds, yet high voltage and high current plans were comparatively steep, while BJTs were available in high voltage and high current designs, however offered lower exchanging speeds to some extent. Insulated Gate Bipolar Transistors (IGBTs) are switching devices with three terminals, which could successfully be deliberated to consist of an insulated gate N-channel MOSFET associated with a PNP Bipolar Junction Transistor. The IGBT unites the high voltage and current capacity of the BJT with the voltage control attributes of a MOSFET which allow higher frequency switching. The IGBT has three connections, Emitter, Gate and Collector. The conduction path is through the Collector and Emitter. Identical to a Thyristor, the IGBT allows controlled current to go through when a signal is recognized at the Gate. A thyristor is “current” and switches “ON” when a pulse is given to the Gate. The IGBT is controlled by voltage, allowing conduction when a positive voltage is there on the Gate, and only switching “OFF” when the voltage is reduced to zero, or ideally, driven negative. The output current and voltage attributes are same to the BJT, but driving the device using the voltage control of the MOSFET facilitates the switching. Another significant convenience over normal MOSFET operation is lower on-state voltage. The resistance provided by the conducting channel in an IGBT is too much smaller, leading to much higher current ratings than for an similar power MOSFET. IGBTs are the best choice for switching current on and off in high power applications. IGBTs are made for use in power applications above 1kW, the point at which BJTs and standard MOSFETs reach their limits, switching at frequencies between 1kHz and 20 kHz. Low voltage applications (<600V) tend to be high volume consumer oriented, for example to control motor drives for washing machines. Key applications include automotive (electric vehicles), rail traction equipment and industrial motor drives, where operating voltages are higher – 1200V or 1700V are typical of the standard ranges available. In numerous applications, rather than using more than one discrete devices, IGBTs are associated into modules, to provide full circuits for particular power control. Read more >>

Después de evolucionar lado a lado en las últimas tres décadas, los transistores bipolares de puerta aislada (IGBTs) y MOSFET dominan ahora el mercado de semiconductores de potencia en aplicaciones como unidades de motor, fuentes de alimentación ininterrumpida (UPS) e inversores solares. Entonces, ¿dónde hacer IGBTs hacer el mejor ajuste, y cuándo tiene sentido de diseño mejor para ir con un MOSFET? Estructuras y principios básicos El IGBT es un dispositivo semiconductor que combina las características de salida de un transistor bipolar y las características de accionamiento de puerta de un MOSFET. Por lo tanto, el IGBT es un dispositivo portador de minorías con alta impedancia de entrada y alta capacidad de transporte de corriente. En comparación con los MOSFETs, los IGBT también son más adecuados para escalar en capacidad de manejo de corriente a niveles de voltaje más altos debido a sus características de salida bipolares. Read more >>

IXYS Corporation, a leading maker of power semiconductors and ICs for power management, energy efficiency and motor control applications announced the 1700V and 2500V XPT™ IGBTs for power management applications. The current ratings of the new devices range from 26A to 178A and these are perfect for high-voltage (“HV”), high-speed power conversion applications. Devices which are packed together with anti-parallel fast diodes are also available. IXYS has an enriched history of presenting cutting edge, state-of-the-art IGBTs and had introduced the HV IGBT outline and applications in power management particularly in the transportation, medical and manufacturing markets. Designed by utilizing the patented IXYS Extreme-Light Punch-Through (XPT™) technology and the leading edge IGBT processes, these latest devices characteristics such as lessened thermal resistance, little tail current, little energy loss, and fast switching capacity. Also, the positive temperature coefficient of their on-state voltage gets credit, the latest high-voltage IGBTs can be used in parallel, which provides cost-efficient solutions compared to series-connected, lower-voltage device ones. This therefore results in diminishing in the related gate drive circuitry, simplicity in design, and advancement in the reliableness of the overall system. The non-compulsory co-packed fast recovery diodes have less reverse recovery time and are designed to generate smooth switching waveforms and notably lower electromagnetic interference (EMI). A significant number of high-voltage (“HV”), high-speed power management applications that can get advantage from using these IGBTs. Among them are HV converters, inverters, power pulse circuits, laser and X-ray generators, HV power supplies, HV test equipment, capacitor discharge circuits, medical switching applications, HV circuit protection, and HV AC switches. The new XPT™ IGBTs are found in the following international standard size packages: SOT-227, TO-247, PLUS247, ISOPLUS i5-Pak™, TO-247HV, TO-247PLUS-HV, and TO-268HV. The latter three have increased creepage distances between leads, making them sturdy against provoked voltages. Some example part numbers include IXYH24N170C, IXYN30N170CV1, IXYH30N170C, and IXYH25N250CHV, with collector current ratings of 58A, 88A, 108A, and 95A, respectively. Read more >>

Actualmente el mercado enfrenta una modernización inevitable esto incluye los modulos IGBT que empiezan a reemplazar aparatos rupestres y antiguos con la gran oleada tecnológica y ademas SIMPLEZA que los IGBT tienen, en este articulo exploraremos dos grandes factores: Mercado Global de IGBT y Tiristores: Factores de Crecimiento Debido a la tecnología desarrollada y la introducción de redes inteligentes en el sector de la energía, se prevé que el mercado mundial de IGBT y tiristores aumentará en un futuro próximo. Sin embargo, el aumento de la población y la demanda de una enorme fuente de energía se espera que realce el crecimiento del mercado. IGBT y tiristor se utilizan como fuentes de alimentación, controladores e inversores en aplicaciones de electrónica de potencia para satisfacer la creciente demanda de dispositivos de conmutación de estado sólido. Se espera que el número creciente de familias e infraestructura nucleares alimente la demanda del mercado en el futuro. IGBT y tiristores acomodan varias ventajas tales como menos tiempos de conmutación de MOSFET y pérdidas mínimas de conmutación para satisfacer las demandas actuales de electricidad en el futuro. Mercado Global de IGBT y Tiristores: Segmentación El mercado mundial de IGBT y tiristores puede ser segmentado en base a la aplicación como sistema de transmisión de CA flexible (FACTS) y HVDC. De los cuales, la aplicación de sistema de transmisión de CA flexible (FACTS) es el segmento líder en el mercado, ya que se utiliza para la gestión de la congestión, estabilización de voltaje, estabilización de frecuencia; Mantener el control de flujo de potencia y estabilidad, y otros. Otros segmento de aplicación es sub-segmentado como EV / HEV, energía renovable, regulador de nivel de líquido, transporte, regulador de luz, control de presión, controles de motor, etc. Read more >>

Wolfspeed introduces SiC technology to outdoor systems in transportation and renewable energy. Wolfspeed has stretched its SiC power devices with the launch at PCIM 2017 of the industry’s inaugural power module that overcomes the tough environment qualification test for concurrent high-humidity, high-temperature and high-voltage situations. This reliableness benchmark allows system designers to utilize this device in outdoor applications such as transportation, wind, solar and other renewables where ultimate environmental conditions have traditionally challenged secure device operation. The latest all-SiC module, rated for 300 A and 1.2 kV blocking, was strained in an 85% relative humidity, 85 degree celsius ambient while biased at 80% of rated voltage (960V). Accomplishment in tough situation testing under bias provides further confidence in the overall robustness of SiC device technology for all applications. “SiC components enable the design of compact, lightweight, low–loss converters required for railway transport applications,” said Michel Piton, semiconductor master expert at Alstom, a leading global supplier of systems, equipments and services for the railway market. “Achieving March 2017 the benchmark for temperature and humidity under high bias voltage is a key milestone for SiC devices in its adoption into our demanding market.” Powered by new Wolfspeed MOSFETs (CPM2-1200-0025A) and Gen5 Schottky diodes that also pass the tough environment test at the die level, the latest module retains the low 4.2 mΩ on-resistance and more than five times lower switching losses than similarly rated, latest generation IGBT modules. Module construction uses high thermal conductivity aluminum nitride substrates and optimised assembly methods to meet industry thermal and power cycling requirements. “This device is yet another industry-first driven by Wolfspeed,” said John Palmour, Wolfspeed’s chief technology officer. “The latest 1200V module demonstrates our commitment to enabling markets and applications by meeting the anticipated system requirements for 2020 and beyond.” Available under part number WAS300M12BM2, the latest module can be driven using existing Wolfspeed gate drivers for 62mm modules. Read more >>

Aunque las generaciones mas modernas de los IGBT suelen tener mas capacidad de aguante y una incidencia a incidentes de apagado casi nula vale la pena saber cuales son las caracteristicas a evitar y como reconocer cuando sucede una de estas fallas para asi prolongar de manera significativa la vida de nuestros IGBT o MOSFETS y cuando no dan para mas, saber cuando cambiarlos. Sobrecarga Esencialmente, el comportamiento de encendido y conmutación de IGBTs y MOSFETs bajo sobrecarga no difiere de la "operación estándar" bajo condiciones nominales. Con el fin de no sobrepasar la temperatura de unión máxima y para garantizar un funcionamiento seguro, el rango de sobrecarga tiene que ser restringido, ya que una mayor corriente de carga puede causar una mayor disipación de energía en el dispositivo o la destrucción de componentes tales como diodos debidos a efectos de modo de fallo dinámico. Cortocircuito Esencialmente, IGBT y MOSFET son a prueba de cortocircuitos, es decir, pueden ser sometidos a cortocircuitos bajo ciertas condiciones dadas y desactivarlos activamente sin dañar los semiconductores de potencia. Read more >>

Dada la amplia disponibilidad de IGBTs y MOSFETs de potencia de alto voltaje con clasificaciones de voltaje de ruptura de 500 a 800 V, los diseñadores suelen enfrentarse al reto de seleccionar un IGBT o MOSFET para una aplicación dada y un conjunto de condiciones operativas. En el caso de accionamientos de motor de velocidad variable trifásicos en el rango de potencias nominales de 300 W a 5 kW, utilizando una tensión de bus cc en el rango de 300 a 400 V y típicamente implementado mediante una topología de seis interruptores, Los IGBT de 600 a 650 V (co-empaquetados con un diodo de recuperación rápida anti-paralelo) han sido tradicionalmente el dispositivo preferido desde una perspectiva de rendimiento global. Sin embargo, con la disponibilidad de alta velocidad de conmutación, RDS bajo (on) y diodos de cuerpo de recuperación relativamente rápidos de 500 a 650 V, se plantea la cuestión de si es hora de que el IGBT ceda el MOSFET Read more >>

El IGBT tiene la ventaja sobre el MOSFET a mayores frecuencias de conmutación. Pero a frecuencias de conmutación más bajas, el MOSFET tiene la pérdida global más baja y la temperatura de unión de funcionamiento más baja. (El IGBT y MOSFETs seleccionados tienen aproximadamente los mismos tamaños de matriz y impedancias térmicas.) Esto es de alguna manera contraria a la sabiduría convencional donde a menudo se argumenta que los MOSFET tienen un mejor desempeño en frecuencias de conmutación más altas. Sin embargo, estos resultados indican lo contrario y pueden atribuirse principalmente debido al componente de pérdida de recuperación de diodos significativamente más bajo del IGBT + FRD (diodo de recuperación rápida) y la mejora significativa en minimizar el comportamiento de corriente de cola del IGBT. La menor pérdida de conmutación del IGBT + FRD debido a un componente de pérdida de recuperación de diodo significativamente menor le da la ventaja sobre el MOSFET a 20 kHz (una frecuencia de conmutación relativamente alta para esta aplicación). Además, la pérdida de conmutación del MOSFET se puede reducir significativamente mediante el uso de un controlador de puerta con una mayor capacidad de fuente y corriente de hundimiento (por ejemplo, un controlador de fuente de alimentación 2-A / corriente de hundimiento). Como resultado, las pérdidas totales de MOSFET se reducirían y permitirían al MOSFET cerrar la brecha entre éste y el IGBT. El dv / dt superior resultante, sin embargo, podría causar efectos indeseables tales como sonidos de alta frecuencia y un mayor nivel de EMI irradiado. Curiosamente, a frecuencias de conmutación más bajas donde domina la pérdida de conducción, el MOSFET se beneficia debido a la ausencia de una "rodilla" en sus características de avance, junto con un RDS relativamente bajo (on). Mientras que el IGBT sigue siendo el mejor dispositivo para seleccionar en este ejemplo de aplicación, la disponibilidad de significativamente menor RDS (on) MOSFET junto con un mejor comportamiento de recuperación de diodos y un conductor fuerte puerta podría comenzar a inclinación de la balanza hacia el MOSFET. En ese caso, llegaría entonces a una relación coste / rendimiento ("$ / Amp") con el IGBT probablemente teniendo el borde debido a una densidad de corriente mucho superior (para un tamaño de dado dado). Los IGBTs y MOSFETs similares están a menudo disponibles para una aplicación dada. Es útil comprender claramente las ventajas y limitaciones de ambos dispositivos y elegir uno que mejor se adapte a los requisitos en términos de rendimiento general y costo. Si bien esto no es un esfuerzo fácil, una mayor familiaridad con estos dispositivos de energía resultará beneficioso en la navegación de estas decisiones complejas. Read more >>

En este informe ofrecemos una evaluación completa del mercado. a través de profundas ideas cualitativas, datos históricos y proyecciones verificables sobre el tamaño del mercado. Las proyecciones presentadas en el informe se han derivado utilizando metodologías y suposiciones de investigación probadas. Al hacerlo, el informe de investigación sirve como un repositorio de análisis e información para cada faceta del mercado, incluyendo pero no limitado a: mercados regionales, tecnología, tipos y aplicaciones. Aumentar los sistemas de seguridad, no sólo la seguridad pasiva, p. (ABS), control electrónico de estabilidad (ECS), detección de puntos ciegos (BSD), control adaptativo de crucero (ACC) y asistencia de cambio de carril (LCA), entre otros. . Todas estas funciones inteligentes mencionadas anteriormente requieren un dispositivo semiconductor para realizar su función. La función principal de un semiconductor es conducir la electricidad fácilmente en una dirección entre otras funciones más específicas. Las regulaciones sobre seguridad y emisión impulsarán el mercado de los componentes y dispositivos conectados en el vehículo para asegurar el monitoreo y la notificación de la emisión de vehículos cumpliendo con las regulaciones establecidas por el gobierno. Read more >>

Las regulaciones sobre seguridad y emisión impulsarán el mercado de los componentes y dispositivos conectados en el vehículo para asegurar el monitoreo y la notificación de la emisión de vehículos cumpliendo con las regulaciones establecidas por el gobierno. Requieren semiconductores cada vez más potentes para garantizar que el rendimiento de los vehículos está en conformidad. Por lo tanto, la razón anterior a su vez está ayudando al mercado de semiconductores automotrices para crecer durante el período previsto de 2016-2024. Además, los estándares de vehículos como el programa de evaluación de vehículos nuevos (NCAP), que otorga calificaciones de seguridad a los nuevos vehículos fabricados como estrellas, están impulsando a los fabricantes de automóviles a proporcionar más y más componentes electrónicos para proporcionar más seguridad y sistemas de seguridad para el vehículo. Obtener el nivel más alto de cinco estrellas puede actuar como un punto de venta fuerte para los vehículos. Su logro se basa en complejos y sofisticados sistemas de conducción asistida que requieren un contenido significativo de semiconductores para que estos sistemas funcionen. Read more >>

Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) expande su cartera de productos de modulos IGBT ofreciendo con un discreto de 1200 V hasta 75 A. Los dispositivos están co-embalados con un diodo de máxima clasificación en un paquete TO-247PLUS. Los nuevos paquetes TO-247PLUS sirven a la creciente demanda de mayor densidad de potencia y mayor eficiencia en paquetes discretos. Las aplicaciones típicas con una tensión de bloqueo de 1200 V que requieren una alta densidad de potencia son unidades, fuentes de alimentación fotovoltaicas e ininterrumpidas (SAI). Otras aplicaciones incluyen sistemas de carga de baterías y almacenamiento de energía. En comparación con un paquete TO-247-3, el nuevo paquete TO-247PLUS puede proporcionar una clasificación de corriente doble. Debido a la eliminación del orificio de tornillo del paquete estándar TO-247, el paquete PLUS tiene un área de marco de plomo más grande y por lo tanto puede acomodar chips IGBT más grandes. Ahora, por primera vez, se dispone de hasta 75 A de 1200 V con IGBTs con la misma pequeña huella. El marco de plomo más grande proporciona una menor resistencia térmica del TO-247PLUS, dando lugar a una capacidad mejorada de disipación de calor. Para los diseñadores que buscan mejorar las pérdidas de conmutación, el paquete delTO-247PLUS 4pin cuenta con un pin de fuente de emisor Kelvin extra. Esto permite un bucle de control por la puerta del emisor a su vez lainductancia es ultrabaja y reduce las pérdidas totales de conmutación E (ts) en más del 20% Los IGBTs clasificados como 1200 V como el TO-247PLUS de 3 y 4 paquetes se pueden utilizar para aumentar la densidad de potencia del sistema. Además, pueden reducir el número de dispositivos de alimentación utilizados en paralelo, aumentar la eficiencia del sistema o mejorar las condiciones térmicas del sistema. Read more >>

On last April 28th, Infineon Technologies AG commenced the latest 600 V TRENCHSTOP™ Performance IGBT offering the next level of competency. The state-of-the-art discrete IGBT delivers high energy efficiency and reliabeness at an aggressive price point for applications like air conditioning, solar PV inverters, drives and uninterruptible power supply (UPS). Based on Infineon’s TRENCHSTOP technology,the latest IGBT is optimized for hard switching topologies working at frequencies of up to 30 kHz. The latest TRENCHSTOP Performance IGBT series incorporates the best trade-off between conduction and switch-off energy losses with exceptional toughness. 5 µsec short circuit capacity and fantastic electromagnetic interference (EMI) behaviour. The 600 V TRENCHSTOP Performance is a great alternative to the predecessor TRENCHSTOP IGBT from Infineon as well as to contending products. In a plug-and-play replacement the new TRENCHSTOP Performance IGBT yields lessened losses of 7 percent at switching frequency of 8 kHz. A matchless 11 percent lower aggregate loss is delivered for switching frequency of 15 kHz. Making use of the same packages, redesigns for higher efficiency and competitive cost can be realized simply, fast and with less efforts. The 600 V TRENCHSTOP Performance IGBT contributes to more energy efficient power consumption, higher reliability and longer operational lifetime of the application. For end consumers this translates into a lower electricity bill, sustainability and environmental protection. Read more >>

UPS (Uninterruptible Power Supply) is considered as one of the best ways to save electrical equipments from power problems. It is an electrical apparatus that provides emergency power to a load when the input power source, typically mains power fails. At home we need UPS when we use our PC. Others areas that need UPS are data centre, process backup, military operation etc. There are several varieties of UPS: online UPS, offline UPS and line interactive UPS. Online UPS is inverter supply directly to load; offline UPS is the inverter starts only when utility is not present, line interactive UPS is an offline UPS with an AVR / line conditioner. There is an inverter which converts DC current (Battery power) to AC current is called UPS inverter. IGBT rectifier technology is the latest and most effective technology in the UPS industry. It uses the high frequency to rectify the AC to DC. IGBT rectifier reduces harmonics substantially and reduces the upsize of upstream components. Hence, reduce initial cost and operation cost. Read more >>

El convertidor de frecuencia del sistema proporciona una solución completa para aplicaciones de media tensión PARTE 1 La Serie MVW3000 de variadores de velocidad de WEG ha presentado nuevos aparatos con muchisimas funciones tales como: El variador de velocidad variable de media tensión MVW3000, que cuenta con una eficiencia, densidad de potencia y fiabilidad extremadamente alta, se vende como un sistema completo integrado en un armario de distribución. WEG ha presentado tambien en la serie MVW3000 de variadores de velocidad para voltajes de 2.3kV a 8kV y niveles de potencia de 28 kW a 2.400kW. Esta familia de dispositivos está construida con tecnología multinivel y puentes H en cascada (CHB). La topología multinivel se basa en la conexión en serie de tres a diez módulos de alimentación de baja tensión (690 V) con convertidores de salida IGBT en configuración de puente en H, dependiendo de la tensión de salida. Esto permite alcanzar niveles de voltaje en la gama de voltaje medio utilizando componentes de baja tensión estándar probados (diodos, IGBT y condensadores de película de plástico) de una manera rentable. Como característica especial, el MVW3000 se suministra como un sistema completo integrado en un armario de distribución, incluyendo aislador de media tensión, fusibles, transformador de alimentación multinivel y convertidor de frecuencia "El actual voltaje y rango de potencia es sólo la primera etapa en la evolución del producto. Mayores tensiones y niveles de potencia ya están disponibles bajo petición ", dijo Johannes Schwenger, jefe de sistemas de control de producto de baja tensión y media tensión de Europa en WEG. "El MVW3000 es una solución todo-en-uno de alto rendimiento que elimina la necesidad de aparatos de conmutación de media tensión adicionales. Este sistema de transmisión de velocidad variable cuenta con excelentes parámetros de entrada y salida, eficiencia energética y alta disponibilidad, junto con un fácil mantenimiento, modularidad y manejo suave del motor. Esto hace que este sistema de accionamiento de velocidad variable sea el complemento ideal para todos los motores de media tensión comercialmente disponibles y la elección perfecta para proyectos de retrofit gracias a su voltaje de salida virtualmente sinusoidal ", si deseas saber mas de estos nuevos implementos acompañanos en la parte 2 de este articulo. El sistema de accionamiento de velocidad variable MVW3000 proporciona un rendimiento de conducción extremadamente alto. El factor de potencia de red es superior a 0,95 en toda la gama de revoluciones del motor, sin ningún filtro de armónicos adicional o condensadores de compensación. La arquitectura de dispositivo integrada proporciona unas cifras de distorsión armónica de red sobresalientes para corriente y tensión (THD I / V y TDD) según IEEE 519, IEC 61800-3 y G5 / 4-1. El dispositivo cumple con los límites establecidos en estas normas, incluso en su configuración básica. El rendimiento del inversor, incluido el transformador, supera el 95 por ciento en toda la gama de velocidad del motor y es superior al 96 por ciento con niveles de carga superiores al 40 por ciento. El circuito de carga para el transformador de potencia multinivel asegura la magnetización del núcleo del transformador sin corrientes de arranque y una carga suave de los condensadores de enlace de CC para la etapa del inversor. El transformador de potencia permite la adaptación de la tensión de red a la tensión de salida del motor y la reducción de la tensión de modo común en el devanado del motor. También reduce las corrientes de modo común a través de los cojinetes del motor para maximizar la vida del rodamiento. Las interfaces entre la CPU del convertidor de frecuencia y la etapa de potencia para el control IGBT, la supervisión de la temperatura, la realimentación de la tensión y la realimentación de la corriente se implementan utilizando fibra óptica para aumentar la inmunidad al ruido y proporcionar un aislamiento efectivo entre las secciones de control y potencia. Las etapas de potencia (puentes H) están construidas con condensadores de película de plástico, fusibles semiconductores y una función de bypass automático del inversor para proporcionar una mayor disponibilidad del sistema en caso de fallo. El voltaje y la corriente de salida prácticamente sinusoidales reducen la disipación de potencia, las vibraciones y la pulsación de par en el motor. Con el fin de mejorar la fiabilidad y la disponibilidad del sistema, el MVW3000 está equipado con dispositivos de protección del motor para la protección contra sobrecarga, sobrecalentamiento y bloqueo del rotor del motor. Las temperaturas de la etapa de potencia y del transformador también se monitorean constantemente. Como sistema de empaque, el MVW3000 simplifica la instalación y puesta en marcha. Las etapas de potencia de enchufe facilitan el mantenimiento y el reemplazo rápido. Con dimensiones de 3.900 x 2.210 x 1.100 mm (An x Al x D), el sistema de accionamiento de velocidad variable también tiene una pequeña huella. Además, opcionalmente puede equiparse con todos los protocolos de comunicación industriales más habituales, incluyendo Modbus, Profibus, Devicenet y Ethernet. Read more >>

Modern train traction systems use high-speed switching IGBTs in main circuits. High-speed switching reduces electromagnetic noise generated by the main motor and improves the efficiency of energy conversion. For the inverter control system, vector control is employed to control the torque current component and the exciting current component separately, which are output to the induction motor. Since vector control ensures high-speed torque control, it is also applied to slip-slide control to improve adhesion force. The maintenance work for contacts and pneumatic parts can be eliminated by replacing mechanical contacts in each unit with electronic contacts and by changing the pneumatic operation system to an electromagnetic one. The numerous advantages of insulated gate bipolar transistor (IGBT) power modules and their ongoing development for higher voltage and current ratings make them interesting for traction applications. These applications imply high reliability requirements. One important requirement is the ability to withstand power cycles. Power cycles cause temperature changes which lead to a mechanical stress that can result in a failure. Lifting of bond wires is thereby the predominant failure mechanism. A fast power cycling test method activating the main failure mechanism has been developed which allows reproduction of millions of temperature changes in a short time. The applicability of fast testing is supported by a mechanical analysis. Read more >>

The inductive cook top creates a flat smooth surface that is easier to clean making it attractive to consumers. An induction cooker transfers electrical energy by induction from a coil of wire into any pot made of material which is electrically conductive and ferromagnetic. A coil of wire is mounted under the cooking surface and a large alternating current is passed through it to transfer power to the pot. When an electrically conductive pot is brought close to the cooking surface, the magnetic field induces an electrical current in the pot. The current flowing through the electrical resistance in the pot causes electrical power to be dissipated as heat. The heating of the pot can be used for cooking the food. Induction cook tops have become very popular displacing most resistive heated cook tops. The power circuit used to deliver power to the pot via the coil must operate at a relatively high frequency of 25-50 kHz when compared with motor drive inverters. In order to reduce the switching losses in the IGBTs, the typical circuit topology is based up on resonant converters. Soft-switching circuit operation greatly reduces power losses during the switching transient in IGBTs providing high efficiency circuit operation. Many companies have developed optimized IGBT structures for this application due to the large market size. Read more >>

Los semiconductores de potencia, entre ellos los IGBT, están ganando aceptación debido a su implementación en muchos tipos de aplicaciones de alta tensión. Sin embargo, se espera que estos componentes alcancen una alta eficiencia y fiabilidad además de mantener unos bajos niveles de pérdidas. Al ampliar su gama existente, formada por IGBT para alta corriente e IGBT con una menor tensión de saturación y una conmutación más rápida, Rohm presenta ahora su 3ª generación de IGBT para una alta eficiencia. Los nuevos dispositivos utilizan una estructura de oblea más fina, así como tecnologías de atenuación de campo y estructura propia de puerta de zanja para obtener las prestaciones más avanzadas con el fin de cubrir la creciente necesidad de conmutación a alta frecuencia. Los nuevos IGBT de 650V de 3ª generación de Rohm, basados en una estructura avanzada de atenuación de campo, ofrecen un menor gradiente de concentración de portadores en la región de deriva que permite mejorar la distribución de los portadores. Gracias a ello es posible reducir la tensión de saturación y aumentar la velocidad de conmutación, logrando así un excelente compromiso entre la tensión de saturación y las pérdidas en el paso a corte, a diferencia de las soluciones convencionales. Read more >>

Los motores sin escobillas se utilizan frecuentemente en aplicaciones (H) EV. Estos motores altamente eficientes se basan en sensores de posición del rotor rápidos y precisos para conmutación, ya que estos parámetros del sensor tienen un impacto significativo en el comportamiento de arranque, la dinámica, la ondulación del par y la eficiencia. Existen diferentes principios para detectar la posición del rotor: resolución electromecánica (inductiva) y magnética. Los sistemas de sensores basados en resolver las problematicas de los transitores tienen algunas limitaciones (salida analógica, circuito complejo, altos costes del sistema, limitaciones de espacio, sensibilidad a campos perdidos y tolerancias de posicionamiento, etc.). La familia de microcontroladores AURIX de 32 bits, con su ADC delta-sigma para realizar la generación de señales portadoras y la codificación basada en software, ya ayuda a ahorrar el IC de resolución externa y, por lo tanto, el coste del sistema en un 20%. Por otro lado, los sensores de ángulo resistente a magneto (xMR) con tecnología AMR (Anisotropic-Magneto-Resistance) o GMR (Giant-Magneto-Resistance) ofrecen una precisión de alta precisión, combinada con una baja sensibilidad frente a las tolerancias de posición. Read more >>

The automotive industry, largest in the world, is fast-growing and diverse, with a wide range in customer preferences for design, comfort and technology. It is well recognized that gasoline power vehicles produce significant urban pollution while consuming a dwindling fossil fuel resource. A solution to this problem is the deployment of electric and hybrid-electric vehicles. The global goals to reduce emissions and fuel consumption, with pioneering efforts in developing electric vehicles (EVs) and hybrid electric vehicles (HEVs), bring significant technology challenges. All hybrid-electric and electric cars that have been introduced into the market so far have relied up on IGBT-based motor drives. In new powertrain generations such as EVs and HEVs, IGBTs play the key role in order to drive the electric motor or store the energy. IGBTs run at very high frequencies and under high power which makes them vulnerable to thermal problems. Thermal characterization helps to optimize the IGBTs layout, structure and mounting to optimize its performance. After all we can say, the availableness of IGBTs has been diametrical to the advancement of the hybrid vehicles and to the expansion of the charging substructure for the electric vehicles. IGBTs will carry on playing a significant part in the availableness of expense reducing technology for the whole hybrid and electric vehicle business. Read more >>

El fabricante líder mundial en tecnología de motores y de accionamientos, presenta la nueva serie de variadores de velocidad MVW3000 con tensión nominal desde 2,3kV a 8kV y potencia nominal de 280 kW a 2.400 kW. Esta familia de dispositivos incorpora tecnología multinivel y puentes H en cascada (CHB). La topología multinivel está basada en la conexión en serie de tres a diez módulos de potencia IGBT de baja tensión (690V), dependiendo de la tensión de salida. De este modo, se pueden alcanzar niveles de tensión en el rango de media tensión utilizando, de manera rentable, componentes de baja tensión estándares probados (diodos, IGBTs y condensadores de película de plástico). Como característica especial, el MVW3000 se suministra como un sistema completo integrado en un armario de distribución, incluyendo interruptor de desconexión de media tensión, fusibles, transformador de alimentación multinivel y módulo de velocidad variable. “El actual rango de tensión y potencia es solamente la primera etapa en la evolución del producto. Hay tensiones y potencias más elevadas disponibles si se solicitan,” comenta Johannes Schwenger, Jefe de Producto para Sistemas de Accionamiento de Baja y Media Tensión en Europa para WEG., y añade: “El MVW3000 es una solución integral de alto rendimiento que no necesita ninguna aparamenta de media tensión adicional. Este sistema de accionamiento de velocidad variable se distingue por sus extraordinarios parámetros de entrada y salida y sus excelentes niveles de eficiencia energética y disponibilidad, además de un fácil mantenimiento y un tamaño compacto pero eficiente que les permite ser usados en muchos campos. Read more >>

The best way to protect electronic equipments from power problems is using UPS. UPS units have different sizes, from little desktop system that shields an individual PC to massive UPS that can supply power to a whole building. Nearly every organization has a power safeguard necessity, ranging from companies with computer UPS provides power to your equipment in the case of an entire power collapse, giving you opportunity to save data and close files. At a more commencing level, the UPS conditions and filters networks to hospitals, airports, oil rigs and anywhere where uninterrupted power is must. Today maximum industries are using UPSs to save their core business against mains failures, mains supply fluctuations, power surges, and other troubles in the electrical supply. The option of picking a Rotary or Static UPS for industrial applications has become contentious and the myths require rectification. Over recent years, Static UPSs have captured a large share of the UPS market when compared to the Rotary type, although Rotary UPSs still sustain popularity in industrial environments where ratings are in excess of 800kVA. The drawback is however, that Rotary technology is usually 30% more costly than the substitute Static offerings. Now-a-days, Static UPSs are a major rival for industrial installations, and the conveniences and benefits they offer, have seen consultants considering their design criteria from Rotary to Static technology. Outward appearances and inverters of Static UPS have changed amazingly in modern years with thyristor technology being replaced with IGBT technology. This recent technology has assisted notably to enhance the potency and managing of non-linear loads (computers and SMP type loads) with excessively low voltage distortion. With thyristor technology, peaks of the voltage wave form were frequently flattened, whereas this does not happen with the more recent IGBT technology. A moreover advantage of IGBT is that it minimizes the size of the inverter stacks and makes allowance for repairs to be done more effortlessly. And, owing to digitally controlled UPS design and growth in the IT arena, it is now very simple to monitor UPSs remotely from a different site or even from another country. Read more >>

Un aumento excesivo o inesperado de la temperatura interna puede conducir a la evaporación del agua ya la pérdida de refrigerantes en los sistemas críticos de enfriamiento de la turbina, y eventualmente puede causar que la electrónica de la turbina se sobrecaliente. Esto es una preocupación particular en las máquinas con un sistema de refrigeración de lazo abierto y puede ocurrir incluso con el uso de refrigerantes de alta calidad. Un sistema de bucle abierto permite que el agua se evapore gradualmente desde el refrigerante de agua-glicol en el circuito de transistor bipolar de puerta aislada (IGBT), particularmente durante el tiempo cálido. (Los IGBT son un componente electrónico utilizado típicamente en turbinas debido a sus capacidades de conmutación rápidas y eficientes.) Un problema puede ocurrir cuando la evaporación del agua disminuye el nivel del refrigerante y eleva la concentración de la mezcla. Si el sistema se deja sin control y no se mantiene, el desequilibrio de mezcla resultante inhibe las propiedades de enfriamiento del fluido. Esto potencialmente compromete el IGBT. Huelga decir que una pérdida de componentes IGBT debido al sobrecalentamiento puede resultar en costosas pérdidas de hardware y un tiempo de inactividad significativo de la turbina. Para evitar esto, los operadores de viento han "vendado" el problema con una cadencia regular de monitoreo de refrigerante, reposición de agua y reequilibrio de la mezcla de fluido refrigerante. Este enfoque puede funcionar cuando se respeta diligentemente, pero es un costoso plan de mantenimiento. Requiere tomar la turbina y el transformador fuera de línea, lo que también significa tiempo de inactividad de la turbina y pérdida de ingresos para el parque eólico. Read more >>

The IGBT has a major impact on the transportation sector in all over the world. It enabled the introduction of cost effective and reliable electronic ignitions systems that have improved gasoline fuel efficiency by at least 10 percent. They have also been critical elements in the improvement of mass transit systems and the deployment of electric and hybrid electric vehicles. Modern mass transit systems rely up on electric trains where the propulsion is derived from supplying AC power to motors. High speed rail, such as the European TGV and the Japanese Shinkansen bullet trains allows travel by large numbers of people while avoiding fossil fuel consumption experienced with gasoline powered automobiles and aircraft. Until the 1990s, the silicon GTO was the only available power semiconductor switching device with the power handling capability suitable for this application. In the 1990s, the ratings of IGBTs had sufficiently advanced, to exceed one Mega-Watt allowing penetration of the IGBT into this traction market. The availability of the IGBT allowed significant improvements in the motor drive technology due to elimination of snubber circuits and an increase in the operating frequency of the inverter circuit used to deliver power to the motors. Mass transit systems within cities must rely upon a busses, trams, and underground trains. Many cities have been replacing gasoline powered busses with electric busses and trams to reduce urban pollution. All of these below requirements were met by using the IGBT-based motor drive in control system for the electric transit bus: (a) wide range of speed including high operating speed; (b) large startup torque for good acceleration; (c) high efficiency; and (d) regenerative braking to increase utilization of batteries. In Europe and Japan, electric tram transit systems have been modernized by using IGBT-based motor drives. According to AEG-Westinghouse Transport Systeme, Germany, the low floor concept is becoming a standard customer prerequisite. This has been enabled by today’s IGBT modules. Read more >>

State-of-the-art medical diagnostic equipment has transformed the quality of care for our society. Non-invasive imaging of the interior of the body enables the surgeon to perform operations while minimizing damage to adjacent tissue and organs. The IGBT has been used since the early deployment of CT scanners for the control of the gantry on which the patient is reclining as described below. It is also used in the power supply for X-ray and Ultrasound machines. In addition, hundreds of thousands of lives are being saved due to the availability of portable defibrillators which require IGBTs for delivering the controlled shock to the patient of cardiac arrest as discussed below. Computed tomography (CT) generates a three dimensional image of a patient using a large series of two dimensional images taken around a single axis of rotation. The image is generated by viewing the patient using x-ray imaging from numerous angles. A single plane of a patient is scanned from various angles in order to provide a cross-sectional image of the internal structure of that plane. A three-dimensional view can then be created by mathematical analysis that combines the images. The gantry on which the patient is reclining is positioned using closed loop feedback control of motors in order to accurately move and position the patient. An IGBT-based motor drive is employed by all manufacturers, such as GE, Philips, and Siemens, for precise and controlled movement of the gantry. The CT scanner contains an X-ray tube with detectors located diametrically opposite the X-ray source which are rotated around the patient to generate a section image. CT scanners can provide detailed cross-sectional images of nearly every part of the human body including the brain, neck, shoulders, cervical spine, heart, lungs, abdomen, liver, kidney, pelvis, etc. Read more >>

KV-CEI aísla sistemas electrónicos de contaminantes aéreos, polvo, químicos y evaporación de vapor de agua. Es un recinto que funciona cerrando el sistema de circuito de refrigeración de la atmósfera exterior (donde escapa la evaporación) con una cámara de respiración. El aire exterior infla y desinfla la vejiga cuando los niveles de fluido dentro del tanque de aislamiento se expanden y se contraen de los cambios de temperatura del líquido del sistema. Una válvula de alivio de baja presión ayuda a prevenir la sobre-presurización del sistema en caso de que el aire imprevisto quede atrapado dentro de las líneas de fluido. Una válvula de cierre abierto que extrae aire permite que el sistema drene y rellene con los niveles de fluido adecuados durante un ciclo de mantenimiento preventivo normal. Al aislar el volumen interno del depósito de la atmósfera exterior existente, el sistema impide la evaporación del agua y la entrada de contaminantes en el aire en la solución de agua-glicol. Una válvula de retención proporciona protección contra sobrepresión y un indicador de nivel visual permite la confirmación local del nivel de refrigerante. Además, un puerto permite añadir un interruptor flotante opcional de nivel de líquido estándar para la indicación remota de refrigerante de bajo nivel. "El diseño de KV-CEI es lo suficientemente versátil como para permitir la adición de sensores de bajo nivel de líquido cuando sea necesario en una turbina". Mosher dice que los diseños personalizados también son posibles. "También podemos diseñar muchas opciones de montaje para adaptarse a un patrón de montaje particular". El objetivo es mantener las turbinas eólicas generando energía incluso en temperaturas extremas, sin añadir más visitas de mantenimiento a un sitio. "El retorno de la inversión para la solución KV-CEI se puede medir en tan sólo unas pocas semanas en climas más cálidos ya temperaturas de operación elevadas", dice Mosher. Read more >>

Plasma cutting involves cutting a material using a plasma torch. It is commonly used to cut steel and other metals, but can be used on a variety of materials. In this process, gas (such as compressed air) is blown at high speed out of a nozzle; at the same time an electrical arc is formed through that gas from the nozzle to the surface being cut, turning some of that gas to plasma. The plasma is sufficiently hot to melt the material being cut and moves sufficiently fast to blow molten metal away from the cut. The transistors used in plasma cutting were initially MOSFETs, but are now increasingly using IGBTs. With paralleled MOSFETs, if one of the transistors activates prematurely it can lead to a cascading failure of one quarter of the inverter. A later invention, IGBTs, is not as subject to this failure mode. IGBTs can be generally found in high current machines where it is not possible to parallel sufficient MOSFET transistors. Read more >>

The most effective way to save electronic equipments from power problems is using UPS. UPS units have different sizes, from little desktop system that shields an individual PC to massive UPS that can supply power to a whole building. Nearly every organization has a power safeguard necessity, ranging from companies with computer UPS provides power to your equipment in the case of a entire power collapse, giving you opportunity to save data and close files. At a more commencing level, the UPS conditions and filters networks to hospitals, airports, oil rigs and anywhere where uninterrupted power is must. Today maximum industries are using UPSs to save their core business against mains failures, mains supply fluctuations, power surges, and other troubles in the electrical supply. Spontaneous control, outstanding switching features and excellent reliability make IGBTs the perfect option today for medium and high-power UPS. These modules greatly enhance UPS performance, specifically in terms of proficiency, acoustic noise, shaped and weight. In high capacity UPS where the inverter functions between 2 and 4 kHz, the prime benefit of the IGBT is simplification of transistor control (better reliableness). IGBT is comparable to the bipolar transistors in terms of efficiency. Read more >>

The fixing system for the toner in copy machines, laser printers, facsimile machines, data recorders, and scanners needs transfer of toner from the rolling drum to the printing paper with heat and pressure. Radiant heating with halogen lamps was used for this process in the past. However, nearly 90 percent of the printing energy is consumed by this operation. The efficiency can be improved by using the induction heating approach leading to reduction of the size of the printing devices. The induction heating coil is installed concentrically inside the fixing roller. The high frequency inverter required to feed the inductive energy into the heating coil is built using IGBTs. The actual high efficiency of more than 94 percent of the series resonant ZCS-PDM high frequency inverter for IH roller in copy and printing machines has been observed for all the output AC power regulation ranges from 50 to 1200 W. Read more >>

PWM VFD operations need great switching speed which can be attained by using IGBTs (insulated gate bipolar transistor). Switching on and off several thousand times a second is one of the main attributes of IGBTs. A VFD IGBT can turn on in less than 400 nanoseconds and off in about 500 nanoseconds. It is composed of a gate, collector and an emitter. When a positive voltage (typically +15 VDC) is applied to the gate the IGBT will turn on. This is same to closing a switch. Current will flow between the collector and emitter. A VFD IGBT is turned off by removing the positive voltage from the gate. During the off state the IGBT gate voltage is generally held at a small negative voltage (-15 VDC) to restrain the device from turning on. IGBTs are used as power devices by all recent VFDs. These devices make it possible to reduce annoying audible noise by using switching frequencies beyond the audible range. Unfortunately, VFDs using IGBTs, present a high potential for generating RFI - Radio Frequency Interference. Fast switching in these devices generates sharp-edged waveforms with high frequency components that generate more RFI. The most probable complaint is interference with AM band radios 500-1600 kHz. However, sensitive computers, medical equipment and other interference-sensitive devices sharing the same power buss could experience significant interference. In extreme conditions, the VFD itself can experience electrical noise interference. If elevator machine room equipment is not properly laid out and correctly wired, the electrical noise propagated by the elevator VFD system can intervene with the elevator controller. The switching speed, simple control and overload withstand of the IGBT currently make it a component of considerable interest. Read more >>

Heart specialists, neonatologists, obstetricians, urologists, gastroenterologists use ultrasound based imaging extensively for diagnosis and treatment of patients. Sound waves above the audible range of humans are called ultrasound. The choice of the ultrasound frequency for diagnostic purposes is a trade-off between image resolution and special depth. Due to the longer wavelength of the sound wave, lower ultrasound frequencies produce images with less resolution, although these penetrate deeper into the body. Normal ultrasound frequencies range from 2 to 18 MHz. A hand-held probe is used to perform Sonography that is placed and moved over the patient while viewing the image in real time. A piezoelectric transducer with a phased array is contained in the probe, which allows altering the direction and depth of the sound wave. The sound wave is reverberated from the organs inside the body at different intensities depending upon their composition and the time taken for the echo to return to the transducer specifies the distance travelled by the wave. For diagnostic purposes, this information is converted to an image. The application of a high voltage pulse to the piezoelectric medium produces the sound wave from the ultrasound transducer. The pulse must have amplitude of over 1000 volts with a current of 20-50 amperes. Because of the short duration of the pulse, generally 0.5 microseconds, with a less operating frequency of 200-Hz, the best approach is to slowly charge a capacitor through a diode when the IGBT is off and then turn-on the IGBT for the short pulse duration to discharge the capacitor through the transducer. Read more >>

Rice is the first & foremost food for billions of people around the world, especially in Asian countries such as China, India, and Japan, with mass populations. According to Asian Rice Foundation, “Rice is arguably the world’s most important food. It is the second most widely cultivated cereal in the world, after wheat, and is a staple food of over half the world’s population. Rice can be cooked in a variety of ways, including boiling, baking, roasting, frying, and pressure-cooking. Cooking rice in an automatic rice cooker is becoming very popular, as it ensures consistent results and cooking instruction is much simpler to follow”. Many Asian companies have developed rice cookers based up on the induction heating principle. The induction heating can be accomplished by using an induction cooking plate or preferably by using an induction rice cooker. Two types of circuit topologies have been explored for the induction rice cooker. First one is the half-bridge series resonant converter and another is the quasi-resonant converter. The series resonant converter has the advantages of stable switching, low cost, and streamline design. The quasi-resonant converter has the advantage of a smaller design with reduced heat sink. The quasi-resonant converter is more widely used. Due to the large market for these appliances, some semiconductor companies have developed IGBT products optimized for this market for the quasi-resonant converter topology. IGBTs feature a robust and cost effective Field Stop (FS) trench construction, and provide superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. IGBTs are well suited for this type of resonant or soft switching applications. Read more >>

In the highly emulative UPS market, every renowned UPS manufacturer is trying to ameliorate their UPS performance and reliability steadily. This increasing demand will only be satisfied if the components used can keep pace. IGBTs are considered as one of the best choices for medium and high-power UPS because of their simple control, great switching characteristics and excellent reliability. Especially in terms of efficiency, acoustic noise, size and weight, they remarkably uplift UPS performance. In high power UPS where the inverter operates between 2 and 4 kHz, the main benefit of the IGBT is simplification of transistor control (increased reliability). Its efficiency is equal to that of bipolar transistors. In medium power UPS often installed in computer rooms, the acoustic noise criterion makes it necessary to remove the 50 or 60 Hz transformer and to add an inverter operating at a frequency of 16 kHz, thus making the IGBT absolutely indispensable both due to the lessening in number of components required to control it and due to the gain in weight and in total dimensions. Production of new products calls for a prudent, meticulous choice of new components. We are frequently informed about the announcements of new elements as the IGBT is still in the growth stage. Present studies should not be questioned as authorized approval of a power semiconductor is long and expensive. Read more >>

Infineon amplió la cartera de productos de los módulos IGBT de EconoPIM 3 pulgadas. La corriente nominal del módulo se incrementa con ello de 100A a 150A. Las aplicaciones típicas para los módulos de potencia para las unidades de control de motor en ascensores, escaleras mecánicas, ventiladores o bombas. Los módulos incluyen un rectificador trifásico, un chopper de frenado, un inversor trifásico y un termistor (NTC) para la medición de temperatura. A una tensión de bloqueo de 1200V, el nuevo EconoPIM 3 alcanza una corriente máxima nominal de 150A. La carcasa está equipada con una placa de base y corresponde en dimensión a la norma de la industria. Puede ser incorporado en los diseños existentes. Cuando se utiliza en las unidades EconoPIM 3 permite de acuerdo con el proveedor en el mismo tamaño de hasta 30 por ciento más de potencia de salida. Los módulos de usar el chip IGBT4 con la tecnología TrenchStop, robustez y fiabilidad. Disponibilidad: El módulo EconoPIM con 1200V / 150A está disponible con pines de soldadura o pernos press-fit. Esto se aplica a todas las variantes con el chip IGBT4 en la tecnología TrenchStop. Además, los módulos opcionales con material de interfaz térmica (TIM) están disponibles. Los módulos de potencia están disponibles en la producción de volumen, las muestras están disponibles. Read more >>

In a typical HVDC power transmission system, the power is transmitted at very high voltages (above 100-kV) in order to reduce the current on the cables. Large currents in cables require more copper which adds to the cost and weight. Since power semiconductor devices are unable to withstand such high voltages, it is necessary to connect many devices in series to satisfy the system requirements. In addition, for higher power levels, many devices may have to be connected in parallel as well. The series and parallel combination of power devices comprises an HVDC valve. The most common configuration for modern overhead HVDC transmission lines is bipolar because it provides two independent DC circuits each capable of operating at half capacity. Two basic converters topologies are used in modern HVDC transmission systems: conventional line-commutated, current-source converters (CSC) based up on thyristor-valves and self-commutated, voltage-sourced converters (VSC) based up on IGBT-valves. Each valve consists of a large number of series connected thyristors or IGBTs to sustain the desired DC voltage rating. In the case of current source converters with thyristor valves, a Graetz bridge configuration is used allowing six commutations or switching operations per period. Self-commutated, voltage-source converters using IGBTs are preferred because they allow independent rapid control of both active and reactive power. Reactive power can also be controlled at each end of the transmission line providing total flexibility in network design. The self-commutated, voltage source converters can be constructed using IGBTs without the snubbers required for GTOs. The rate of rise of the current in the IGBT can be controlled by tailoring the gate drive voltage waveform without any ancillary components. This allows controlling the reverse recovery of the anti-parallel rectifiers without the snubbers. The reduced passive components in the IGBT-based VSC inverters reduce system cost. Read more >>

Refrigerators have become essential appliances in society for the preservation of food and beverages. The quality of life for people has been greatly enhanced with the availability of affordable refrigerators for homes. Most household refrigerators utilize the vapor compression cycle with a circulating refrigerant used to cool the refrigerator compartment. Household refrigerators originally used an on/off controlled, constant-speed, single-phase induction motor to drive the compressor. The poor efficiency of this approach made the refrigerator one of the highest power consumption appliances in the home. In order to improve the efficiency, modern refrigerators with the Energy star rating utilize variable-speed, three-phase induction motor drives. Current models that are Energy Star qualified use 50 percent less energy than the average models made in 1974. The variable speed drive to the induction motor is provided using the six IGBTs in the inverter stage. The author’s state: “The total energy savings was about 40%. The system is very quiet and maintains a constant temperature within 0.1 degree Celsius which improves the quality and shelf life of food stored in the refrigerator.” Many companies have optimized IGBTs for use in refrigerator compressor drives due to the large market opportunity. Some companies have developed intelligent power modules, which combine the IGBTs, fly-back rectifiers, and the drive circuits into a single module. This provides a very compact and low cost motor drive option that can be easily adopted for the manufacturing of refrigerators. Read more >>

A vacuum cleaner is an appliance that uses an air pump to create a partial vacuum to suck up dust and dirt from floors, and other surfaces. The dirt is collected by a dust-bag for future disposal. Hubert Cecil Booth invented the motorized vacuum cleaner in 1901. Since then, their use has proliferated and vacuum cleaners are now very commonly used in homes on a regular basis to maintain a healthy living environment. Manufacturers of vacuum cleaners include Eureca, Hoover, Bissell, and Dyson. In the past, universal motors were mostly used for vacuum cleaners due to high operating speed with low cost. However, these motors use a mechanical brush which wears out at high speeds limiting the performance. Modern vacuum cleaners with higher output power (suction) are designed using switched reluctance motors. The power circuits used for operation of the switched reluctance motor in vacuum cleaners. These circuits utilize IGBTs to overcome the difficult start-up problem for switched reluctance motors and for maintaining a high operating speed. The author’s state: “Its lifetime is extended 4 times than that of conventional motor and its suction power is increased 20% at the same volume of conventional universal motor”. Read more >>

Microwave ovens are used to heat foods quickly and conveniently and it has become an inseparable part of our kitchens and offices now-a-days. It is also used for used for stewing, frying, baking, steaming, and fermenting foods. Microwave ovens are designed for tabletop use or for mounting above the range. Microwave ovens heat food by following the principle of dielectric heating using microwave radiation, usually at a frequency of 2.45 GHz, through the food. Water, fat, and other substances in the food, absorb energy from the microwaves resulting in heating. The microwaves interact with the food in a uniform fashion leading to food being more evenly heated throughout. Prior the availableness of the IGBT, the traditional power supply for the magnetron was a ferro-resonant circuit. Although simple in construction, this power supply was heavy and bulky because of the large size and weight of the low-frequency (50-60 Hz) step-up transformer. After the availability of the IGBT, a magnetron power supply based up on using a high frequency inverter was developed. In this new power supply the anode voltage of the Magnetron rises above 3500 volts when the IGBT is turned on allowing it to generate microwave energy. The power delivered by the magnetron can therefore be precisely controlled using the on-time for the IGBT. Using the IGBT-based inverter circuit, the weight of the transformer could be lessened by more than 10-times. Read more >>

Nearly 20 years ago, IGBT modules were first commenced to be used mainly in industrial equipments, and are now being utilized in electric power conversion systems for controlling motors in a wide range of fields, ranging from household appliances such as air conditioners to applications in the railroad industry. In recent years, the extent of automotive applications has been expanded and improvement is aiming to realize IGBT modules having even higher levels of performance. A hybrid vehicle system consists of an electric motor, a battery and an inverter. An electric power conversion system is needed to supply electrical energy from the battery to the motor, and to store energy generated by the motor in the battery. The inverter is used as that power conversion system. IGBTs (insulated gate bipolar transistor) are one of the most common modules to use as the main switching device in this electric power conversion system. Hybrid systems can be broadly categorized as either a dual-motor system (traction motor and generation motor) focused on travel performance or a single motor system that combines traction and generation functions and that is focused on miniaturization. The single-motor hybrid system, known as a parallel hybrid system (hereafter referred to as a parallel hybrid), is expected to increase in popularity with application to small vehicles where the parallel hybrid advantages of small size and light weight can be fully appreciated. Read more >>

El informe de investigación MOSFET de IGBT y Super Junction se centra en los principales líderes empresariales mundiales que presentan información como perfiles de empresa, imagen del producto y especificaciones, volumen, producción, precio, costo, ingresos e información de contacto. También se dan a conocer las materias primas de las aguas arriba, además de los equipos y el análisis de la demanda aguas abajo. Se examinan las tendencias en desarrollo de la industria del MOSFET de IGBT y de Super Junction. En última instancia, la probabilidad de nuevos proyectos de financiación se evalúan y en general IGBT y Super Junction MOSFET investigación conclusiones ofrecidas. Con 150 tablas y cifras, el IGBT y Super Junction MOSFET mercado informe contribuye a las estadísticas clave sobre el medio ambiente de la industria y es una importante fuente de liderazgo y administración para las empresas e individuos que participan en el IGBT y Super Junction MOSFET mercado. Preguntas clave respondidas en este IGBT y Super Junction MOSFET informe de investigación de mercado 2017-2022: ¿Cuál será el tamaño del mercado MOSFET IGBT y Super Junction en 2020 y cuál será la tasa de crecimiento? ¿Cuáles son las principales tendencias del mercado de MOSFET IGBT y Super Junction? ¿Qué está haciendo el mercado de MOSFET de IGBT y Super Junction? ¿Cuáles son las provocaciones al crecimiento del mercado MOSFET de IGBT y Super Junction? ¿Quiénes son los hombres de negocios clave en el espacio IGBT y Super Junction MOSFET? ¿Cuáles son las posibilidades del mercado de MOSFET de IGBT y Super Junction y las intimidaciones a las que se enfrentan los principales proveedores? ¿Cuáles son los poderes y las tendencias de los vendedores IGBT y Super Junction MOSFET mercado clave? Read more >>

Aunque el segmento de potencia discreta y módulo es un mercado maduro, es dominado hoy por Infineon, que tiene dos veces los ingresos del segundo fabricante de estos productos, dijo el Dr. Pierric Gueguen, gerente de unidad de negocios, Yole Développement. "En este mercado, esta posición no es adecuada a largo plazo. Esperamos que el mercado continúe consolidándose para obtener más activos para competir con el líder del mercado. La adquisición de IXYS es un ejemplo, así como la adquisición de Fairchild por ON Semiconductor el año pasado ". "Con la adquisición de IXYS, Littelfuse confirma su presencia y posición como proveedor de IGBT", agregó Gueguen. "Littelfuse se beneficiará de los diseños de dispositivos IXYS y conocimientos de empaquetado de módulos, así como una sólida cartera de patentes para acelerar su desarrollo tecnológico y sus ingresos". Antes de la adquisición de IXYS, Littelfuse adquirió la línea de productos IGBT de ON Semiconductor en septiembre de 2016. El negocio generó menos de $ 25 millones en ingresos en el año fiscal de 2015. La mayoría de los jugadores de IGBT ofrecen soluciones discretas y de módulos en el rango de voltaje medio de 600V a 1300V, que representa más del 60 por ciento del mercado mundial de IGBT, dijo Yole. Read more >>

Alfa y Omega Semiconductor Limited (AOS), diseñador, desarrollador y proveedor global de una amplia gama de semiconductores de potencia y circuitos integrados de potencia, está ampliando su familia de conmutadores de conmutación rápida 650V H-series IGBT 1200V clasificación. El nuevo AOK40B120H1 ha sido desarrollado para satisfacer las necesidades de soldadura industrial y convertidores de alta frecuencia con entrada trifásica de corriente alterna o alta tensión. El dispositivo ofrece un excelente rendimiento en aplicaciones de alta frecuencia de conmutación, que puede ser un ajuste perfecto para máquinas de soldadura industriales de alto voltaje. El AOK40B120H1 ha sido diseñado con la plataforma tecnológica AlphaIGBT ™ de patente pendiente de AOS y cuenta con un sistema de encendido rápido y un VCE (SAT) de 1,8 V, lo que reduce las pérdidas de potencia durante la conducción y la conmutación. Además, la clasificación mínima de BVCES de 1200V y la alta robustez de enganche permiten un diseño de aplicación de seguridad más grande. "El AOK40B120H1 aborda exhaustivamente las necesidades de los diseñadores de sistemas de soldadura discretos basados en IGBT de 1200V. El alto rendimiento, como la baja VCE (SAT) y la baja pérdida de los comportamientos de conmutación de apagado garantizan una operación confiable y altamente eficiente, permitiendo a los diseñadores aprovechar la rentabilidad ", dijo el Dr. Brian Suh, vicepresidente de la línea de productos IGBT de AOS. "Los IGBT de AOS están en una posición única para abordar los puntos de dolor de los clientes con tecnología y soluciones innovadoras". Read more >>

For locomotives, which are driven by diesel or electricity, EMU and DEMU vehicles with AC Traction Motors, new microprocessor based AC-AC Traction System (MAS) offers the latest in technology combining IGBT based Traction Converter with DSP and microprocessor based embedded controls. Microprocessor based Locomotive Control system is used in conjunction with IGBT based traction converter to implement this solution. Every traction converter can be configured to have single or multiple inverters. Each Inverter can be further configured to drive single traction motor (independent axle control) or multiple traction motors (bogie control). Existing product offering ranges from 650kW per Inverter for bogie control to 550kW per Inverter for independent axle control. Anywhere between 2 to 6 such inverters are packaged into one traction converter depending on application with total power rating in the range of 1.3MW to 3MW. Last solution can be scaled or optimized for specific application requirement. Typically heat pipe depended heat sinks are used with forced air cooling to cool down the IGBT switching devices. Both on-board as well as under frame options are available depending on space, weight constraints and cooling air availability. The blowers for cooling air are controllable at different speeds or can be turned off depending on heat sink temperatures, so as to enhance the blower life. Read more >>

El gigante nipon Mitsubishi is mundialmente conocido por su calidad superior en cuanto a sus modulos IGBT, hoy discutiremos acerca del CM150DY-12NF que es un modulo IGBT dual e mitsubishi CM150DY-12NF tiene una serie de ventajas sobre el MOSFET y el BJT, estas son sus ventajas: 1.Tiene una caida de voltaje muy baja debido a la modulación de su conductividad y tiene una densidad de corriente estatica tan pequeña que inclusive el tamaño del chip podria ser reducido 2. Bajo poder de conducción y conectividad , debido a la estructura del input MOS y su puente, puede ser facilmente controlado a comparación (transitores y BJT) en alto voltaje y alta corriente 3.Amplio SOA, tiene una capacidad de conducción muy superior comparada con los transistores bipolares y una excelente capacidad de bloqueo de reversa. Descripción del producto Serie de modulos duales IGBTMOD-NF, 150 amperes/ 600 voltios, cada modulo consiste de dos transistores IGBT en una configuración de medio puente, acda transistor posee una conectividad reversa de rapida recuperacion y un diodo de rueda suelta Read more >>

Repletion and dependability of the forklift are very important for your activities and your lifts are only as powerful as your charged batteries allow them to be. If your facility uses Ferro resonant or SCR battery chargers, you may want to consider the benefits of the high frequency opportunity chargers. You will no longer be suffered from the equipment downtime if you utilize opportunity charging. You’ll be able to utilize idle periods to charge batteries by its charging profile. Not only you will maximize the use of the truck idle time, you may eliminate the need to change batteries, reduce accidents changing batteries, eliminate the need for required battery-changing equipment and battery storage space, and reduce the number of batteries you’ll need to buy. Opportunity charging with high-frequency opportunity chargers also increases productivity by eliminating the need for an operator to leave the work area, travel to the battery room to change batteries, and then travel back to the work area. You will be able to eliminate your battery change room/area, as well as all its hotspots: charging and changing equipment and associated maintenance; a power-hungry ventilation system and its required service calls; and any upgrades to maintain OSHA standards. You can do all these things by simply switching to high frequency opportunity chargers. A full bridge IGBT switch mechanism is utilized by the high frequency charger to produce the cleanest DC output achievable from an industrial battery charger today. Your overall operating costs will go down by this excellent switching mode circuitry which gives you with the best of both worlds: lessened costs and onward productivity. Read more >>

Desde la recesión de semiconductores de 2009 y el fuerte año de recuperación de 2010, las ventas de transistores de potencia se han visto afectadas por la volatilidad del mercado, disminuyendo en tres de los últimos cinco años debido a las correcciones de inventario y las reducciones de los fabricantes de sistemas preocupados por la debilidad económica y la erosión de precios en algunas categorías de productos. Tras recuperarse de una caída del 7% en 2015, las ventas de transistores de energía crecieron un 5% en 2016 a US $ 12.900 millones y se pronostica que alcanzarán un récord récord este año, con ingresos mundiales creciendo un 6% a US $ 13.600 millones. El esperado crecimiento de 2017 en las ventas de transistores de potencia será el primer incremento anual consecutivo en este segmento de mercado de semiconductores en seis años, y eso empujará los volúmenes de dólares más allá del récord récord de US $ 13,5 mil millones establecido en 2011, IC Insights dijo . En 2012 y 2013, los transistores de energía sufrieron su primera caída de ventas anuales consecutivas en más de tres décadas -cabeza del 8% y 6%, respectivamente- después de subir un 12% en 2011 y un aumento del 44% en la recuperación de 2010 respecto del 2009 año de recesión. El mercado de transistores de potencia se recuperó luego en 2014 con un fuerte aumento del 14%, sólo para caer un 7% en 2015. En 2016, esta categoría de mercado de semiconductores discretes comenzó a estabilizarse y se espera que continúe expandiéndose a un ritmo modesto en los próximos años, IC Insights indicado. Sin embargo, la volatilidad en la primera mitad de esta década dio lugar a una caída inusitada en el tamaño del mercado de los transistores de potencia durante los últimos cinco años, IC Insights señaló. Entre 2011 y 2016, las ventas de transistores de potencia cayeron por una tasa de crecimiento anual compuesto de 0,9% negativo, comparado con un incremento medio anual histórico de 25 años de 6,4% (entre 1991 y 2016). IC Insights pronosticó que las ventas mundiales de transistores de energía aumentarán en un CAGR del 4,2% entre 2016 y 2021, llegando a US $ 15,8 mil millones en el último año del pronóstico. Read more >>

El informe de investigación de mercado del transistor bipolar de la puerta aislada de los Estados Unidos (IGBT) da una visión general de las industrias del transistor bipolar de la puerta aislada de Estados Unidos (IGBT) encendido analizando varios segmentos dominantes de este mercado basado en los tipos de producto, aplicación, extremo-a-extremo industrias y su escenario. La distribución regional de las industrias de transistores bipolares aislados de Estados Unidos (IGBT) en todo el mundo se considera para este análisis de mercado, cuyo resultado se utiliza para estimar el desempeño del mercado internacional durante el período comprendido entre 2017 y el año anterior. El informe de investigación de mercado del transistor bipolar de la puerta aislada de los Estados Unidos (IGBT) arroja luz sobre las regiones más importantes: el oeste, suroeste, el medio atlántico, Nueva Inglaterra, el sur, el medio oeste El mercado estadounidense de transistores bipolares de puertas aisladas (IGBT) en el mundo, presenta información crítica y datos factuales sobre la industria de transistores bipolares aislados de Estados Unidos (IGBT), con un estudio estadístico general de este mercado sobre la base de controladores de mercado, limitaciones de mercado y sus perspectivas futuras. Las tendencias y oportunidades generalizadas también se tienen en cuenta en el estudio de mercado de transistores bipolares aislados de Estados Unidos (IGBT). Read more >>

El segundo trimestre del año que corre asi como el preambulo al año 2018 muestra un importante avance en las cifras de mercadeo de los modulos transitores bipolares IGBT, algo que nos vislumbra nuevos acercamientos para los informes de los años por venir, hasta ahora poco a poco el mercado de instrumentos que usan estos modulos ha ido creciendo mas y mas. El informe de mercado del módulo IGBT cubre los datos del fabricante, incluidos: envío, precio, ingresos, beneficio bruto, registro de entrevistas, distribución comercial, etc., estos datos ayudan al consumidor a conocer mejor a los competidores. Este informe también cubre todas las regiones y países del mundo, que muestra un estado de desarrollo regional, incluido el tamaño, el volumen y el valor del mercado del Módulo IGBT, así como los datos de precios. Con la desaceleración en el crecimiento económico mundial, la industria del Módulo IGBT también ha sufrido un cierto impacto, pero aún mantuvo un crecimiento relativamente optimista, los últimos cuatro años, el tamaño del mercado Módulo IGBT para mantener la tasa de crecimiento anual promedio de 6.50% de 3220 millones de dólares en 2013 a 3890 millones de dólares en 2016, los analistas de mercado creen que en los próximos años, el tamaño del mercado del Módulo IGBT se ampliará aún más, esperamos que para el 2021, el tamaño del mercado del Módulo IGBT alcance los 5260 millones de dólares. Read more >>

El análisis de mercado 2016 y predicción de tendencias del mercado 2022 por fabricantes, regiones, tipos y aplicaciones Este informe ofrece una visión general inclusiva y de toma de decisiones, que incluye definiciones, clasificaciones y sus aplicaciones. Se prevé que el mercado del Transistor Bipolar de Puerta Aislada (IGBT) refleje una tendencia positiva de crecimiento en los próximos años. Las fuerzas motrices esenciales detrás del crecimiento y la popularidad del mercado del Transistor Bipolar de Puerta Aislada (IGBT) se analizan detalladamente en este informe. Este articulo describe con más detalle la información sobre tácticas y estrategias utilizadas por las principales compañías clave en la industria del transistor bipolar de puerta aislada (IGBT). También ofrece un amplio estudio sobre diferentes segmentos de mercado y regiones. Acá se explica los asuntos mas importantes del transistor bipolar de puerta aislada (IGBT) ofrece un análisis exhaustivo de la siguiente manera: Segmentos de mercado y subsegmentos Tamaño de mercado y participaciones Tendencias y dinámicas del mercado Controladores del mercado y oportunidades Panorama competitivo Oferta y demanda Invenciones tecnológicas en la industria del transistor bipolar de puerta aislada (IGBT) Tendencia de desarrollo del canal de marketing Posicionamiento en el mercado de transistores bipolares de puerta aislada (IGBT) Estrategia para colocar precios Estrategia de marca Cliente objetivo Lista de distribuidores / comerciantes incluida en el mercado de transistores bipolares de puerta aislada (IGBT) Read more >>

Market research analysts at Technavio predict that the global IGBT market will grow steadily at a CAGR of around 12% by 2021. The rising demand for electric (EV) and hybrid electric vehicles (HEV) is identified as one of the primary growth factors for this market. Government initiatives for controlling the rising environmental concerns and oil prices are driving the shift to electric vehicles. It is estimated that EVs and HEVs can lower the oil consumption by more than one-third by 2020 as electricity is cheap and provides a big cost advantage over gasoline and petroleum. Moreover, electric vehicles are more energy-efficient as they convert about 60% of the electrical energy from the grid to power wheels, whereas their conventional vehicles convert only about 20% of the electrical energy. Electric motors provide quiet, smooth operations and require less maintenance than combustion engines. IGBT is a vital component that is needed to minimize switching loss and maximize the thermal efficiency. IGBTs play a significant role in the smooth operations of electric vehicles in transferring power to the grid at a steady rate. With the increase in adoption of EVs and HEVs around the globe, the IGBT market will witness significant growth in the forthcoming years. In terms of geographic regions, APAC will be the major revenue contributor to the IGBT market throughout the forecast period. Rapid industrialization in the developing countries of the region and the increasing adoption of renewable energy and electric vehicles drive the growth of the IGBT market. Additionally, the growing demand for energy-efficient solutions at the industrial and consumer industries is also contributing to the growth of the IGBT market in APAC. Read more >>

SCALE-2 IGBT gate drivers from Power Integrations include galvanic isolation, protection, and DC/DC conversion in a single module, and are suitable for driving power mosfets and devices based on new materials such as silicon carbide (SiC) operating at switching frequencies up to 500kHz. each type is based on an asic chip-set that integrates the full functionality of a dual-channel gate driver core in a primary-side chip logic-to-driver interface and a secondary-side chip intelligent gate driver. They are available with blocking voltage capabilities from 600V to 6,500V and from 1W to 20W per channel drive. To ensure optimum performance for direct driving of external n-type DMOS elements, the pre-driver stages of each of the modules incorporate separate gate resistors for independent control of on/off functionality. There are single- and dual-channel options, and applications are expected in industrial, motor control, power transmission, traction, solar, wind and automotive. Read more >>

El transistor bipolar de puerta aislada (IGBT) es tecnológicamente el dispositivo más avanzado entre los componentes electrónicos de potencia y cuenta con amplias aplicaciones que van desde hornos electromagnéticos pequeños para uso doméstico hasta industrias estratégicas como el tránsito ferroviario, vehículos eléctricos y redes eléctricas inteligentes. Este discreto dispositivo semiconductor se promociona como la "CPU" de las industrias eléctrica y electrónica, con amplias aplicaciones en los campos de la energía verde, los automóviles de nueva energía y la automatización industrial. En los últimos años, la demanda de productos IGBT en China se ha expandido a una CAGR del 15% para representar casi un tercio de la demanda mundial por el momento, y se estima que su escala de mercado llegará a CNY18.600 millones (US $ 28.01 mil millones) en 2020, con más del 90% de los chips IGBT, sin embargo, todavía dependen de las importaciones. Inspirada en la gran demanda del mercado y respaldada por la política gubernamental, Huahong Grace Semiconductor Manufacturing (HHGrace), con sede en Shanghái, ha desarrollado activamente tecnologías y productos IGBT, y ha ampliado gradualmente sus líneas de productos para incluir chips IGBT para usos comerciales, industriales y de consumo. convirtiéndose en una importante casa de fundición de obleas IGBT en China. En una entrevista reciente de Digitimes, Jiye Yang, director senior de la División I de Integración TD de HHGrace, habló sobre las perspectivas y desafíos del mercado de IGBT en China. Las estadísticas mostraron que el número de vehículos de nueva energía en China aumentó drásticamente de 20,000 unidades en 2013 a 500,000 unidades en 2016, y un crecimiento anual de producción de más del 30% para tales vehículos producidos en el país también se registró para los primeros ocho El plan de desarrollo de la industria automotriz de ahorro de energía y energía publicado por el Consejo de Estado de China (gabinete) indica que la capacidad de producción anual del país para vehículos eléctricos híbridos totalmente eléctricos y enchufables (PHEV) se estima en dos millones. unidades para 2020, traduciéndose en una demanda del mercado por un equivalente de un millón de piezas de obleas IGBT de ocho pulgadas; y su producción acumulativa y ventas de vehículos eléctricos superaría los cinco millones de unidades para el final de ese año, mostrando una demanda de 2,5 millones de piezas de las mismas obleas. El mercado es realmente muy grande. Un desglose adicional mostraría que los módulos IGBT representan el 10% del costo de producción de vehículos de nueva energía y el 20% del costo de la estación de carga. Se estima que los vehículos de nueva energía y las estaciones de carga crearían CNY20 mil millones en la demanda del mercado de módulos de IGBT en los próximos cinco años. Read more >>

Mientras que muchos podrían ver el mercado de la energía como maduro, Mitsubishi apunta a un crecimiento del 10% en los próximos cinco años para dominar la industria. Su operación de módulos en Hungría, Vincotech, será esencial para este crecimiento, dice Toru Sanada, Oficial Ejecutivo a cargo de Semiconductor & Devices en Mitsubishi Electric en una conferencia en Tokio. Esto sigue a la compra de su empresa conjunta Powerex con GE en los EE. UU. Para enfocarse en dispositivos de potencia automotriz. Esta es una de las cuatro áreas en las que se enfocará el negocio, dice Sanada. Estos son electrodomésticos, automatización de fábricas industriales y energía renovable, transmisión CC y automotriz, y serán impulsados por la fabricación de mayor volumen de dispositivos de potencia de silicio y carburo de silicio (SiC) en obleas más grandes. El mercado global para módulos IGBT será de $ 7 mil millones para el 2022, dominado por aplicaciones industriales y Mitsubishi pretende hacer crecer el negocio de energía a ¥ 20 mil millones ($ 2 mil millones), o el 30% del mercado para entonces, en vez de ¥ 130 mil millones ($ 1.3 mil millones) hoy. Read more >>

IXYS Corporation una compañía internacional de energía y semiconductores IC, anunció hoy que su filial británica presentó una nueva adición a su familia de 4.5 kV diodos de recuperación rápida (HP-sonic FRD) con una tasa muy alta de cambio de capacidad actual y características de recuperación suave. Tiene una corriente de operación nominal de 460 amperios y está optimizado para ser utilizado en conjunto con la extensa gama de IGBTs de paquete de prensa de IXYS UK. Las nuevas piezas incorporan la tecnología de ensamblaje y proceso más avanzada de IXYS UK, reemplazando los diseños más antiguos basados en silicio flotante. El nuevo diseño de matriz unida ofrece un diodo con estabilidad térmica mejorada y propiedades mecánicas muy robustas. El silicio se optimiza con un procesamiento avanzado para proporcionar di / dt inigualable, el cambio de la capacidad actual, más de 2 kA por microsegundo, conservando al mismo tiempo una característica de recuperación suave y bajas pérdidas de conmutación. Los diodos están empacados en paquetes de cerámica de 26 mm de espesor totalmente herméticos con electrodos de cobre y son compatibles para sujetar en serie en la misma pila que la gama de IGBT de paquete de prensa de alta corriente de IXYS UK. El dispositivo de 460 amperes tiene una matriz de 43 mm y está empaquetado en un paquete de electrodos de 38 mm con un diámetro total de 60 mm. La designación del número de parte para este nuevo integrante de la familia de IXYS es E0460QC45E. El FRD sonic HP está optimizado para su uso con la gama IXYS UK en igbts de 4500 voltios; como diodos de abrazadera de punto neutro y antiparalelo (para convertidores multinivel) con IXYS UKs los modulos transitores T0240NB45E, T0340VB45G y T0510VB45A. Este modulo también es adecuado para usarse como diodo amortiguador con los IGBT de paquete de prensa más grandes de IXYS UK, como el T1600GB45G, el T1800GB45A, el T2400GB45E y el recientemente lanzado T2960BB45E. Lo cual hace de esta novedad una muy completa adición a la familia de modulos de IXYS. Read more >>

El informe de investigación explora las principales consultas de mercado del mercado global de IGBT después de realizar un análisis completo, intelectual y exhaustivo de la industria de IGBT. El informe ayuda a los proveedores clave, fabricantes de estos modulos ttransitores bipolares y sus respectivos usuarios finales a obtener mejores perspectivas, activos y perspectivas de los segmentos de mercado de IGBT. Las principales zonas topográficas cubiertas en el informe; son Medio Oriente y África, América del Norte, América Latina, Europa y Asia-Pacífico. De esta forma, se completan las facetas conflictivas de la industria, incluidos los esquemas industriales, los cronogramas y los enfoques aparentes. También borra los criterios cruciales como la información de contacto de la empresa, incluida la dirección de correo electrónico, direcciones de sitios web y números de teléfono, grupo de industria IGBT, clasificación, proporción de orden de suministro, asignación de ventas, costo / precio del producto y proveedores clave. Los vendedores recientes que son nuevos en el negocio de los modulos encuentran problemático competir con el oponente del mercado existente que ya tiene cierto lugar establecido, ubicado en todo el mundo. Este estudio de mercado será útil para los ejecutivos de la industria, gerentes de productos, ventas, analistas y consultores. También se establece una descripción amplia de planes y políticas, distribución de productos IGBT, políticas económicas y de comportamiento. Los profesionales y expertos realizan investigaciones primarias y secundarias para recopilar las estadísticas necesarias de dicho producto y mercado, al considerar el análisis FODA (Fortalezas, Debilidades, Oportunidades y Amenazas). Ofrece una idea aproximada de las materias primas utilizadas en los negocios de esta rama, las tecnologías innovadoras, el alcance y los arreglos cambiantes de los canales de comercialización de IGBT. Read more >>

En este informe de investigación dse tratan los conocimientos sobre el mercado del IGBT junto con las oportunidades de mercado, las amenazas y el crecimiento. Inspecciona las divisiones actuales del mercado para predecir las evoluciones y ofrece una segmentación detallada de la industria en función de los tipos de productos, las aplicaciones IGBT y las principales regiones geográficas. En el informe también se menciona el estudio en profundidad de la participación en el mercado y su contribución Destaca los principales factores de un marketing bien aplicado junto con sus diferentes estrategias y enfoques utilizados. El estudio también brinda información sobre mercados locales, regionales e internacionales y segmentos en desarrollo. También se cita la dinámica del mercado que sigue cambiando a lo largo del tiempo y el escrutinio en profundidad de las fuentes de información. Lleva a cabo un estudio más profundo de las tendencias actuales y pasadas del mercado para predecir el crecimiento futuro del mercado en términos de volumen y valor. También calcula los parámetros centrales del negocio , como los avances industriales y el crecimiento, entrega cifras fundamentales del mercado en forma de cuadros, gráficos circulares, gráficos y diagramas de flujos. Las principales aplicaciones de la empresa de modulos transitores bipolares también se determinan en función del rendimiento y los logros. También se discute la construcción de santuarios en las industrias para mejorar sus ventajas en el mundo actual. Read more >>

IGBT y Super Junction MOSFET Market Research Report ofrece un estudio profesional y en profundidad de los principales actores líderes de la industria junto con los perfiles de la compañía y las estrategias adoptadas por ellos. Esto permite al comprador del informe obtener una vista telescópica del panorama competitivo y planificar las estrategias en consecuencia. En el informe se incluye una sección separada con son clave para lo que presenta el informe, que proporciona un análisis exhaustivo de precio, costo, ingresos brutos, imagen del producto, especificaciones, perfil de la empresa e información de contacto. Principales clasificaciones de IGBT y Super Junction MOSFET Market: tipo 1, tipo 2, tipo 3 ... Principales aplicaciones del mismo : aplicación 1, aplicación 2, aplicación 3, etc. Las claves en este informe y reporte: Infineon Technologies Mitsubishi Electric Fuji Electric STMicroelectronics Dynex Semiconductor Microsemi IXYS NXP NTE Infineon Read more >>

Sin motores eléctricos,sin aparatos que funcionen mediante implementos electronicos,sin nada que les de el crecimiento y avance que esperan manejar, la tecnología de accionamiento industrial con sus procesos de producción automatizados difícilmente sería concebible. Los dispositivos semiconductores IGBT controlan las unidades eléctricas de alto rendimiento cuya conexión al aislamiento requerido se realiza a través de fibra óptica de polímero. Sin embargo, esta solución es sensible al espacio y sensible. Harting ofrece a los usuarios una nueva opción de solución miniaturizada en control IGBT. Harting presentó esta solución en la feria SPS IPC Drives Fair en Nuremberg del 28 al 30 de noviembre de 2017. Los electromotores con hasta varios kW e incluso el MW de consumo de energía se utilizan para casi todos los tipos de tecnología de accionamiento industrial. A velocidades constantes, su tecnología de control es bastante simple. Sin embargo, a menudo es necesario regular la velocidad de los motores, lo que a su vez hace que todo sea más complicado. La regulación de velocidad en las clases de potencia más grandes se realiza con semiconductores IGBT. Estos pueden conmutar grandes cargas utilizando potencias de control muy bajas. Las señales necesarias para el control de IGBT se transmiten con fibras ópticas de polímero (POF) ya que se deben cumplir requisitos de aislamiento y tensión muy elevados. El POF logra una transmisión de señal libre de perturbaciones y aislada galvánicamente. La conexión hasta la fecha entre el controlador y la placa de control, es decir, el control y el lado del motor, ha sido manejada por fibras individuales. La conversión electroóptica de las señales tiene lugar en los transceptores de la placa de circuito, por lo que los contactos ópticos establecen la conexión a las fibras. Cada fibra óptica tiene una sola conexión tanto en el controlador como en la placa del controlador, en la que se encuentran los transceptores. Con esta solución anterior, todos los elementos de transmisión y recepción en la placa del controlador requieren un espacio considerable, lo que hace que la placa sea innecesariamente grandes y ocupen mayor espacio del que se plantea una vez que tienen su cabida en los planos, es por esto que para el futuro la solución la plantea la misma empresa Harting Para resolver estos problemas,han desarrollado un principio de transmisión que implica la reubicación de los transceptores de la placa controladora en un módulo conectable y así integra la interfaz óptica de acuerdo con el principio de "conexión eléctrica y transmisión óptica". Harting utiliza soluciones de la serie Han-Eco® 10A en automatización para enchufar electricidad y como carcasa del sistema. La carcasa Han® cumple con los requisitos cada vez más exigentes del mercado de automatización e integra una protección contra torceduras y un alivio de tensión óptimos para las fibras. Read more >>

A new criterion was set up by the VI-J00 MiniMod family in component-level DC-DC converters. This “smaller” size supplement to the higher power VI-200 family presents up to 100W of separated and control power in a board mounted package. With a large number of input/output/power amalgamation, and with a highest working temperature rating of 100°C, the MiniMod gives almost limitless flexibleness for power system designers to cope with challenging time to market demands. VI-JW2-IY is a half brick 15V 50W isolated DC/DC Converter from VI-J00 family. Its operating temperature is -40°C ~ 100°C and the mounting type is through hole. The length, width and height are 61 mm, 57.9 mm and 12.7 mm respectively. You may buy VI-JW2-IY from our website here. Read more >>

VI-264-EU-03/F2 is a member of VI-200 family from Vicor. With more than 14 million units sold, VI-200 is Vicor’s broad series of “zero-current-switching” component-level DC-DC converters. Functioning at frequencies up to 2MHz, VI-200 series converters offer outstanding power consistency, efficiency, noise performance, reliableness and usability. Booster modules (VI-Bxx) provide an easy, cost-efficient, ready-for-service solution for higher power output needs. One or more boosters may be utilized to create synchronous arrays able to provide several kilowatts of output power. VI-264-EU-03/F2’s input voltage: 300 V (200 V - 400 V), output Voltage: 48 V and output Power: 200 W. Its operating temperature is -10°C ~ 85°C and the mounting type is through hole. The length, width and height are 116.80 mm, 47.2 mm and 20.1 mm respectively. It’s efficiency is 88%. The package is Full Brick. Some of VI-264-EU-03/F2’s features: Remote sense and current limit, logic disable, wide range output adjust, ZCS power architecture, low noise FM control, CE marked etc You may buy VI-264-EU-03/F2 from our website here. Read more >>

VI-221-CW is a member of VI-200 family from Vicor. With more than 14 million units sold, VI-200 is Vicor’s broad series of “zero-current-switching” component-level DC-DC converters. Functioning at frequencies up to 2MHz, VI-200 series converters offer outstanding power consistency, efficiency, noise performance, reliableness and usability. Booster modules (VI-Bxx) provide an easy, cost-efficient, ready-for-service solution for higher power output needs. One or more boosters may be utilized to create synchronous arrays able to provide several kilowatts of output power. VI-221-CW’s input voltage: 36 V (21 V - 56 V), output Voltage: 12 V and output Power: 100 W. Its operating temperature is -10°C ~ 85°C and the mounting type is through hole. The length, width and height are 116.80 mm, 61.0 mm and 12.7 mm respectively. It’s efficiency is 88%. The package is Full Brick. Some of VI-221-CW’s features: Remote sense and current limit, logic disable, wide range output adjust, ZCS power architecture, low noise FM control, CE marked etc. You may buy VI-221-CW from our website here. Read more >>

V24A24M400BL is a DC DC converter from Vicor’s maxi family. This DC-DC converter module uses advanced power processing, control and packaging technologies to provide the performance, flexibleness, reliableness and cost efficiencies of a mature power component. High frequency ZCS/ZVS switching provides high power density with low noise and high effectiveness. Its main applications are industrial and process control, distributed power, medical, ATE, communications, defense and aerospace. V24A24M400BL’s input voltage: 18 V (18 V - 36 V), output Voltage: 24 V and output Power: 400 W. Its operating temperature is -55°C ~ 100°C and the mounting type is through hole. The length, width and height are 116.80 mm, 55.9 mm and 15.7 mm respectively. It’s efficiency is 88.2%. The package is Full Brick. Some of V24A24M400BL’s features: low noise zero current switching and zero voltage, single-wire paralleling, logic enable / disable, input undervoltage lockout, output overvoltage protection etc. You may buy V24A24M400BL from our website here. Read more >>

Fior Markets ha publicado un nuevo informe de investigación de mercado sobre "IGBT (transistor bipolar de puerta aislada) y mercado de transitores 2017,un análisis global con pronóstico hasta el año 2022". El informe de mercado entrega datos estadísticos del crecimiento del mercado en términos de volumen y valor y pronóstico para el IGBT (Transistor Bipolar de Puerta Aislada) y Tiristores. Las previsiones se mencionan más adelante para el segmento superior de la industria. El informe global ofrece información decisiva sobre la industria general junto con las dimensiones del mercado y la evaluación de 2017 a 2022. El estudio de investigación con nombre abarca un extenso análisis de varios segmentos, basados en el tipo de aplicaciones, el tipo de productos, componentes y servicios, y diferentes regiones geográficas. Cubre los datos de los fabricantes, incluidos: envío, precio, ingresos, beneficio bruto, registro de entrevistas, distribución comercial, etc., estos datos ayudan al consumidor a conocer mejor a los competidores. Este informe también cubre todas las regiones y países del mundo, que muestra un estado de desarrollo regional, el muy importante dato de valor de mercado, así como los datos de precios. Además, el informe también cubre datos de segmentos, que incluyen: segmento de tipo, segmento de industria, segmento de canal, etc. Cubren el tamaño de mercado de diferentes segmentos, tanto volumen como valor. También cubre información de clientes de diferentes industrias, que es muy importante para los fabricantes, El dato que informa sobre países donde el crecimiento de fabricación y uso de estos implementos se ha generado o crecido tambien esta incluido Cuenta tambien con testimonios y opiniones de las empresas y los usuarios,por lo tanto, el estudio de investigación proporciona una visión completa del mercado global de IGBT (transistores bipolares de compuerta aislada) y tiristores, que ofrece dimensiones de mercado y evaluaciones para el período de 2017 a 2022, teniendo en cuenta los factores antes mencionados. Read more >>

VI-J51-CW is a half brick 12V 100W isolated DC/DC Converter from VI-J00 family. Its operating temperature is -25°C ~ 100°C and the mounting type is Flange. The length, width and height are 57.9 mm, 53.4 mm and 12.7 mm respectively. The VI-J00 MiniMod family embedded a different sizer in component-level DC-DC converters. This “lesser” size complement to the higher power VI-200 family offers up to 100W of isolated and controlled power in a board mounted package. With thousands of input/output/power combinations, and with a maximum operating temperature rating of 100°C, the MiniMod provides nearly unlimited flexibiliy for power system designers to meet demanding time to market requirements. Utilizing Vicor’s “zero-current-switching” forward converter technology, proven by an installed base of over 8 million units, the MiniMod family combines state of the art power density with the efficiency, low noise and reliability required by next generation power systems. You may buy VI-J51-CW from our website here. Read more >>

VI-LJN1- CY is a member of Vicor's MegaMod and MegaMod Jr. groups of single, double and triple output DC-DC converters. It gives power system designers with cost saving, high performance, ready-for- service solutions for applications that might otherwise need a custom supply. Integrating standard VI-200 or VI-J00 Family converters in tough, case mount packages, MegaMod and MegaMod Jr's. can be ordered with single, double or triple outputs, having a consolidated output power of up to 600W. Completely separated outputs take out efficiency penalties and output interaction issues. You may buy VI-LJN1- CY from our website here Read more >>

Vicor’s VI-J00 MiniMod family established a different standard in component-level DC-DC converters. VI-J63-CW is a half brick 24V 100W isolated DC/DC Converter from this family. The length, width and height are 57.9 mm, 53.4 mm and 12.7 mm respectively. Its operating temperature is -25°C ~ 100°C and the mounting type is through hole. It’s RoHS compliant (VE verisons). VI-J63-CW will provide you up to 90% efficiency. Using Vicor’s “zero-current-switching” forward converter technology, proven by an installed base of over 8 million units, the MiniMod family combines state of the art power density with the efficiency, low noise and reliability required by next generation power systems. Some of VI-J63-CW’s features: Low noise FM control, CE Marked, Remote sense and current limit, ZCS power architecture, Logic disable etc. You may buy VI-J63-CW from our website here Read more >>

VI-HAM-EM is a universal AC input PFC front-end Harmonic Attenuator Module that has been optimized for use with Vicor’s V375 series of DC-DC converters. Its length, width and height are 116.90 mm, 61.0 mm and 12.7 mm respectively. It may be used with any combination of V375 series DC-DC converters which are available in Micro, Mini and Maxi packages with up to 600 Watts of output power. The combination of the high-boost VI-HAM-EM with V375 DC-DC converters results in a power conversion system with twice the power density, fewer components and lower cost compared to previous HAM-based solutions. In addition, the VI-HAM-EM is fully compatible with Vicor’s VI-26x and VI-J6x series DC-DC converters. This gives designers the freedom to choose from the industry’s broadest selection of DC-DC converters with outputs from 2 to 95VDC, 50 – 600 Watts. The user need only provide external hold-up capacitors, a few discrete components, and a line flter (available from Vicor). Read more >>

VI-J60-CW is a half brick 5V 100W isolated DC/DC Converter from Vicor’s VI-J00 MiniMod family, which established a different standard in component-level DC-DC converters. Its mounting type is through hole and operating temperature is -25°C ~ 100°C. The length, width and height are 61.0 mm, 57.9 mm and 12.7 mm respectively. Using Vicor’s “zero-current-switching” forward converter technology, proven by an installed base of over 8 million units, VI-J60-CW combines state of the art power density with the efficiency, low noise and reliability required by next generation power systems. It will provide you up to 90% efficiency. Some of VI-J60-CW’s features: Low noise FM control, CE Marked, Remote sense and current limit, ZCS power architecture, Logic disable etc. You may buy VI-J60-CW from our website here Read more >>

The Maxi, Mini, Micro family of DC-DC converters from Vicor provides high power density and low noise, with advanced power processing in a robust package. V375A5C400AL is a member of this family. It is compact and efficient and it got enhanced output programmability, remote sense, and single-wire paralleling for high power or for true redundant operation. V375A5C400AL has an extended temperature range (-55 to 100°C). Some of its features are: Single-wire paralleling, Output voltage adjust 10 – 110%, Logic enable/disable, Input undervoltage lockout, Output overvoltage protection, Overtemperature shutdown etc. Read more >>

Vicor MI-J00 family of DC-DC converters is designed for applications utilizing distributed power architectures. MI-J20-IY is a memeber of this family. Based on Vicor VI-200 / VI-J00 family of zero-current switching, component-level DC-DC converters, the MI-J00 family offers exceptional performance in terms of power density, efficiency, noise, ease of use, and reliability. MI-J20-IY meets the steady-state input voltage requirements of MIL-STD-704D/E/F for 270VDC input. The output voltage can be externally trimmed or programmed from 50% to 110% of nominal output. Current limiting, remote sense, and an inhibit pin all combine to offer a high degree of protection, versatility, and reliability for power systems. Fully encapsulated in Vicor’s industry standard package, MI-J20-IY meets MIL-STD-810 environmental testing requirements for humidity, fungus, salt-fog, explosive atmosphere, acceleration, vibration, and shock. You may buy MI-J20-IY from our website here. Read more >>

V300A5C400BN is a full brick DC-DC converter module from Vicor. It is a member of maxi family, which provides high power density and low noise, with advanced power processing in a robust package. With Through Hole mounting system, its output voltage is 5V and output power is 400W. The length, width and height are 117.0 mm, 56.0 mm and 12.7 mm respectively. V300A5C400BN use advanced power processing, control and packaging technologies to provide the performance, flexibility, reliability and cost-effectiveness of a mature power component. High-frequency ZCS/ZVS switching provides high power density with low noise and high efficiency. You can buy V300A5C400BN

M-FIAM3HN1 is a 270v DC front-end in Filter Input Attenuator Module that provides EMI filtering and transient protection, and inrush current limiting in DC-DC applications. Its Output Current is Up to 25A. The FIAM family from Vicor enables designer using Vicor Maxi, Mini, and Micro DC-DC converters, and in select cases V•I Chip based devices, to meet the transient immunity and EMI requirements of the standards referenced in the respective model datasheet. M-FIAM3HN1 works in conjunction with a specific set of Vicor converters to deliver optimal efficiency, power and protection. You can buy M-FIAM3HN1

VI-JW2-IW is a half brick 15V 100W isolated DC/DC Converter. Its operating temperature is -40°C ~ 100°C and the mounting type is through hole. The length, width and height are 61 mm, 57.9 mm and 12.7 mm respectively. VI-JW2-IW belongs to VI-J00 MiniMod family from Vicor which is proven by an installed base of over 8 million units. By using “zero-current-switching” forward converter technology from Vicor, VI-JW2-IW combines state of the art power density with the efficiency, low noise and reliability required by next generation power systems. The VI-J00 MiniMod family established a new standard in component-level DC-DC converters. This “junior” size complement to the higher power VI-200 family offers up to 100W of isolated and regulated power in a board mounted package. With thousands of input/output/power combinations, and with a highest operating temperature rating of 100°C, the MiniMod provides nearly unlimited flexibility for power system designers to meet demanding time to market requirements. You can buy VI-JW2-IW

V48A12C500BG is a 12V 500W isolated DC DC converter module made by Vicor. It uses advanced power processing, control and packaging technologies to provide the performance, flexibleness, reliableness and cost efficiencies of a mature power component. This maxi converter from Vicor is used in applications such as: industrial and process control, distributed power, medical, ATE, communications, defense and aerospace etc. The high frequency ZCS/ZVS switching of V48A12C500BG provides high power density with low noise and high effectiveness. Its highest operating temperature is 100°C at full load, mounting type is through hole and efficiency is up to 89%. The length, width and height are 117.00 mm, 55.9 mm and 12.7 mm respectively. The package is Full Brick. Some of V48A12C500BG’s benefits: low noise zero current switching and zero voltage, Input surge withstand: 100V for 100ms, parallelable with N+M fault tolerance, logic enable / disable, input undervoltage lockout, output overvoltage protection etc. You can buy V48A12C500BG

VI-240-IV is a full brick isolated converter module from VI-200 series of Vicor. The VI-200 family, with over 14 million units shipped, is Vicor’s broad series of “zero-current-switching” component-level DC-DC converters. Operating at frequencies up to 2MHz, VI-200 family converters offer exceptional power density, efficiency, noise performance, reliability and ease of use. The flexibility of Vicor’s power components is also available in half-size, half-power VI-J00 MiniMods. The output power and the output voltage of VI-240-IV are 150W and 5V respectively. The module size is 4.6" x 2.4" x 0.5"(116,8 x 61,0 x 12,7mm). Its operating temperature is -40°C ~ 85°C. Some features and benefits of VI-240-IV are cULus & cTLus, up to 90% efficiency, remote sense and current limit, logic disable, wide range output adjust, ZCS power architecture etc. You can buy VI-240-IV

V375A24C600AL3 is an isolated DC-DC converter module from Vicor. Its ZCS / ZVS power-processing architecture enables efficient, low-noise, high-frequency operation. The main switch is common drain for improved thermal and noise management, the reset switch located within the primary control IC is common source for ease of control. The control circuitry is integrated into two (primary and secondary side) ICs. The result is a significant reduction in parts with the ensuing savings in cost and increase in reliability. This integration also provides extra room for the power train. Some benefits of V375A24C600AL3 are high efficiency and power density in a brick package, simplified "brick" mounting and thermal management, robust packaging with operating temperature from -55 to 100°C etc. You can buy V375A24C600AL3

MI-260-MW is a full brick, through hole isolated module, which belongs to MI-Series of DC-DC converters from Vicor. This series is designed for applications utilizing distributed power architecture and is based on VI-200 / VI-J00 family of zero-current switching from Vicor, component-level DC-DC converters. Operating at frequencies up to 1 MHz, the MI-Series offers state-of-the-art performance in terms of power density, efficiency, noise, ease-of-use, and reliability. Industry standard package from Vicor enables the MI-Series to meet MIL-STD-810 environmental requirements for humidity, fungus, salt, fog, explosive atmosphere, acceleration, vibration, and shock. Output power and output voltage of MI-260-MW are 100W and 5V respectively. The operating temperature range is -55°C ~ 85°C. Standard features such as wide-output trimming/programming, current limiting, remote sense, logic enable/disable, and latching OVP and OTP combine to offer a high degree of protection, versatility, and reliability for military power systems. You can buy MI-260-MW

If you are looking for an isolated DC-DC converter with exceptional power density, efficiency, noise performance, reliability and ease of use, VI-212-IU can be an excellent choice. This full brick, through hole module is a member of VI-200 family from Vicor. The VI-200 family, with over 14 million units shipped, is broad series of “zero-current-switching” component-level DC-DC converters from Vicor. The output power of VI-212-IU is 200W and output voltage is 15V. Module Size: 4.6" x 2.4" x 0.5"(116,8 x 61,0 x 12,7mm) and Operating Temperature: -40°C ~ 85°C. It is able to provide up to 90% efficiency. Some features and benefits of VI-212-IU are cULus & cTLus, remote sense and current limit, logic disable, wide range output adjust, ZCS power architecture etc. You can buy VI-212-IU

V48C5C50BL is a quarter brick isolated DC-DC converter module from Vicor. It uses advanced power processing, control and packaging technologies to provide the performance, flexibility, reliability and cost effectiveness of a mature power component. High frequency ZCS/ZVS switching provides high power density with low noise and high efficiency. It is parallelable, with N+M fault tolerance. The output voltage and output power of V48C5C50BL are 5V and 50W. Module size: 2.28" x 1.45" x 0.5" (57,9 x 36,8 x 12,7 mm) and mounting type is through hole. It can provide up to 84.5% efficiency, when operated between -20°C ~ 100°C. V48C5C50BL got great features such as: input undervoltage lockout and output overvoltage protection. You can buy V48C5C50BL

V48B28C250BL is a DC-DC converter module with isolated output from Mini family of Vicor. Its high frequency ZCS/ZVS switching provides high power density with low noise and high efficiency. The output voltage and output power of V48B28C250BL are 28V and 250W. Module size: 2.28" x 2.2" x 0.5" (57,9 x 55,9 x 12,7 mm). It uses advanced power processing, control and packaging technologies to provide the performance, flexibility, reliability and cost effectiveness of a mature power component. Its mounting type is through hole and it can provide up to 90% efficiency. The minimum and maximum operating tempearature of this module are -20°C and 100°C respectively.The main use of V48B28C250BL are Distributed power, medical, ATE, communications, defense and aerospace etc. You can buy V48B28C250BL

VI-J62-EW is a half brick isolated DC-DC converter module from the MiniMod family of Vicor. The VI-J00 MiniMod family established a new standard in component-level DC-DC converters. Utilizing Vicor’s “zero-current-switching” forward converter technology, proven by an installed base of over 8 million units, the MiniMod family combines state of the art power density with the efficiency, low noise and reliability required by next generation power systems. The output power and output voltage of VI-J62-EW are 100W and 15V respectively. Its operating temperature is -10°C ~ 100°C and the mounting type is through hole. The length, width and height are 57.9 mm, 61 mm and 12.7 mm respectively. Some features of VI-J62-EW are ZCS power architecture, low noise FM control, logic disable etc. You can buy VI-J62-EW

The VI-200 series of DC-DC converters from Vicor have set the standard for high power, low noise, reliability and ease-of-use in the component power industry. Thousands of combinations of input voltages, output voltages and power levels means not having to compromise when selecting modules for your power system. These power modules are field proven with an installed base of over 15 million units. VI-2W2-IU is a member of this family. Compact and efficient, VI-200 converters feature wide input voltage ranges, remote sense, enhanced output programmability, and low standby dissipation. Power boosters provide a simple, cost-effective solution for higher power requirements up to kilowatts. VI-2W2-IU products also offer output overvoltage protection and thermal shutdown. The electronic circuitry is a fully encapsulated for protection in harsh environments. Read more >>

Questale publicó una nueva investigación de la industria que se centra en el mercado de transformadores convertidores, tiristores e IGBT de Asia-Pacífico y ofrece análisis de mercado en profundidad y perspectivas futuras del transformador convertidor Asia-Pacífico, el tiristor y el mercado IGBT. El estudio cubre datos significativos que hacen que el documento de investigación sea un recurso útil para que los gerentes, analistas, expertos de la industria y otras personas clave obtengan un estudio listo para acceder y autoanalizado junto con gráficos y tablas para ayudar a comprender las tendencias del mercado, los conductores y Asia. Convertidor del Pacífico convertidor, tiristor y IGBT desafíos del mercado. El estudio está segmentado por Aplicación / Transformador Convertidor Aplicación usuarios, Aplicación de tiristores, Aplicación IGBT, productos tipo Convertidor convertidor, Tiristores, IGBT y varias geografías importantes como China, Japón, Corea del Sur. El reporte cubre los puntos de crecimiento en el continente asiatico as como también las alzas y bajas en el mercado y como es el comportamiento de compra-venta y distribución, tambien proporciona perfiles de la compañía, imagen y especificaciones del producto, ventas, participación de mercado e información de contacto de fabricantes clave de transformadores convertidores Asia-Pacífico, tiristores y mercado IGBT, algunos de los cuales se enumeran aquí son Siemens, ABB, GE. El mercado de transformadores conversores, tiristores e IGBT de Asia-Pacífico está creciendo a un ritmo muy rápido y con el aumento de la innovación tecnológica, competencia y actividades de fusiones y adquisiciones en la industria, muchos proveedores locales y regionales están ofreciendo productos específicos para usuarios finales variados. Los nuevos fabricantes que ingresan en el mercado de transformadores convertidores Asia-Pacífico, tiristores e IGBT encuentran dificultades para competir con los proveedores internacionales en función de la calidad, la confiabilidad y las innovaciones en tecnología. Read more >>

V375B48C300BG is an excellent 9-DIP DC-DC converter module from the Mini family of Vicor. It is a great choice for applications such as: Off-line systems with auto-ranging or PFC front ends, industrial and process control, distributed power, medical, ATE, communications, defense and aerospace etc. Having features like: single-wire paralleling, logic enable / disable, input undervoltage lockout, output overvoltage protection etc. it works exceedingly well as a mature power component. If you want performance, flexibility, reliability and cost effectiveness in a single DC-DC converter module, V375B48C300BG would be a great choice. The output voltage and output power of V375B48C300BG are 48V and 300W. Module size: 2.28" x 2.2" x 0.5" (57,9 x 55,9 x 12,7 mm) and mounting type is through hole. It can provide up to 89% efficiency, when operated between -20°C ~ 100°C. You can buy V375B48C300BG

V375C5C100BG is extensively used in applications like industrial and process control, distributed power, medical, ATE, communications, defense and aerospace etc. This quarter brick DC-DC isolated converter module from the micro family of Vicor uses advanced power processing, control and packaging technologies to provide the performance, flexibility, reliability and cost effectiveness of a mature power component. High frequency ZCS/ZVS switching of V375C5C100BG provides high power density with low noise and high effciency. The output voltage and output power of V375C5C100BG are 5V and 100W. Module size: 2.28" x 1.45" x 0.5" (57,9 x 36,8 x 12,7 mm) and mounting type is through hole. It can deliver up to 81.8% efficiency, when operated between -20°C ~ 100°C. You can buy V375C5C100BG

VI-264-EU is a member of VI-200 family from Vicor. With more than 14 million units sold, VI-200 is Vicor’s broad series of “zero-current-switching” component-level DC-DC converters. Functioning at frequencies up to 2MHz, VI-200 series converters offer outstanding power consistency, efficiency, noise performance, reliableness and usability. Booster modules (VI-Bxx) provide an easy, cost-efficient, ready-for-service solution for higher power output needs. One or more boosters may be utilized to create synchronous arrays able to provide several kilowatts of output power. VI-264-EU’s input voltage: 300V (200V-400V), output Voltage: 48 V and output Power: 200 W. Its operating temperature is -10°C ~ 85°C and the mounting type is through hole. The length, width and height are 116.80 mm, 61.0 mm and 12.7 mm respectively. It’s efficiency is 88%. The package is Full Brick. Some of VI-221-CW’s features: Remote sense and current limit, logic disable, wide range output adjust, ZCS power architecture, low noise FM control, CE marked etc. You can buy VI-264-EU

If you are searching for an isolated DC-DC converter with great power density, efficiency, noise performance, reliability and ease of use, VI-200-CX can be an fantastic choice. This full brick, through hole module is a member of VI-200 family from Vicor. The VI-200 family, with over 14 million units shipped, is broad series of “zero-current-switching” component-level DC-DC converters from Vicor. The output power of VI-200-CX is 75W and output voltage is 5V. Module Size: 4.6" x 2.4" x 0.5"(116,8 x 61,0 x 12,7mm) and Operating Temperature: -25°C ~ 85°C. It is able to provide up to 90% efficiency. Some features and benefits of VI-212-IU are cULus & cTLus, remote sense and current limit, logic disable, wide range output adjust, ZCS power architecture, CE Marked, Low noise FM control etc. You can buy VI-200-CX

The VI-200 family is Vicor’s broad series of “zero-current-switching” component-level DC-DC converters. More than 14 million units of this family have been shipped and customers are very happy with the performance and reliability of the modules. These converters have set the standard for high power, low noise, reliability and ease-of-use in the component power industry. Thousands of combinations of input voltages, output voltages and power levels means not having to compromise when selecting modules for your power system. VI-264-CU is one of the members of this family. It offers exceptional power density, efficiency, noise performance, reliability and ease of use. Output overvoltage protection and thermal shutdown are two great features of VI-264-CU. You can buy VI-264-CU

VI-221-IW is a full brick isolated DC-DC converter module from VI-200 series of Vicor. The VI-200 family, with over 14 million units shipped, is Vicor’s broad series of “zero-current-switching” component-level DC-DC converters. Compact and efficient, VI-221-IW features wide input voltage ranges, remote sense, enhanced output programmability, and low standby dissipation. It also offers output overvoltage protection and thermal shutdown. The electronic circuitry is a fully encapsulated for protection in harsh environments. VI-221-IW’s input voltage: 36 V (21 V - 56 V), output Voltage: 12 V and output Power: 100 W. Its operating temperature is -25°C ~ 85°C and the mounting type is through hole. The length, width and height are 116.80 mm, 61.0 mm and 12.7 mm respectively. Its efficiency is 90%. The package is Full Brick. Read more >>

VI-263-EU, a DC-DC isolated converter module from the VI-200 family of Vicor offers exceptional power density, effciency, noise performance, reliability and ease of use. The VI-200 family, with over 14 million units shipped, is Vicor’s broad series of “zero-current-switching” component-level DC-DC converters. Compact and efficient, VI-200 converters feature wide input voltage ranges, remote sense, enhanced output programmability, and low standby dissipation. The electronic circuitry is a fully encapsulated for protection in harsh environments. By using VI-263-EU, you will be able to achieve up to 88% efficiency. It is used in Railway, High Efficiency Battery Chargers, Military Vehicles This full brick converter also offers output overvoltage protection and thermal shutdown. You can buy VI-263-EU

Lo controladores IGBT aplicados en mercado global, Encuesta profesional del año 2017: tamaño, cuota, tendencias, crecimiento de la industria, oportunidad, aplicación, producción, segmentación, estructura de costes, perfil de empresa, imagen de producto y especificaciones durante el período de previsión para 2022 El informe de mercado Global MOSFET e IGBT Gate Drivers ofrece información decisiva sobre la industria general de MOSFET e IGBT Gate Drivers junto con las dimensiones del mercado y la evaluación para el período 2017-2022. El estudio de investigación incluye análisis exhaustivos de varios segmentos de la industria MOSFET e IGBT Gate Drivers basado en el tipo de aplicaciones, tipo de componentes y servicios del producto, y diferentes regiones geográficas. Geográficamente, el mercado global de controladores de puerta MOSFET e IGBT está diseñado para los siguientes mercados regionales: La investigación de la industria está diseminada en todo el mundo, que incluye el mercado MOSFET e IGBT Gate Drivers en Norteamérica (EE. UU., Canadá y México), mercado en Asia-Pacífico (China, Japón, Corea, India y Sudeste de Asia), mercado en Europa (Alemania , Francia, Reino Unido, Rusia e Italia), mercado en América del Sur (Brasil, Argentina, Colombia, etc.), mercado en Medio Oriente y África (Arabia Saudita, Emiratos Árabes Unidos, Egipto, Nigeria y Sudáfrica) y otras partes del mundo. Debido al aumento de las oportunidades de trabajo en los países de Asia-Pacífico, China e India mostrarán un gran desarrollo en el mercado global de Controladores de Puerta MOSFET e IGBT. El uso de tecnología avanzada tiene la mayor participación en el mercado mundial de controladores de compuerta MOSFET e IGBT en América del Norte. La adopción de controladores de puerta MOSFET e IGBT en los distintos campos de Europa ayudará a aumentar la expansión del mercado de controladores de puerta MOSFET e IGBT a nivel mundial. Read more >>

A 48kW resonated converter involves four power modules, per module contains two paralleled IGBTs and ant parallel diodes. They are arranged in a half-bridge or push-pull configuration depending on the input, at 400Vac or 200Vac. At maximum power, peak load current is 550A at 50 kHz, or 275A per module for 48kW out. The generator is zero-voltage switched to create a continuous series resonant output current that's transformer-isolated stepped up and rectified to the desired output level. The output voltage is regulated by a DSP based frequency modulated controller, with dual loop feedback on resonant current and load kV. For a range of output power, the system operates from 48 kHz up to 68 kHz with a resonant LC shunt across the load transformer. With fundamental series resonance at 48 kHz, the shunt resonates at 68 kHz. At low frequencies, the generator functions near resonance, with high power throughput. As frequency increases, the impedance rises the load being shorted by the resonant shunt. At 68 kHz, power is zero. Minimum size is important for state of the art X-ray equipment. In this version of the converter, the four ZVS modules with their tightly packed IGBT and FRED chips require only ¼ of the surface area formerly used. Integration of drivers, isolation, and ZVS logic circuitry further shrinks the footprint. Control signals have less distance to travel, which improves noise immunity and mechanical Read more >>

In the western countries, it is now very common to have a food processor on the kitchen counter for the preparation of food. In contrast to blenders, food processors use interchangeable blades and disks instead of a fixed blade and their bowls are designed wider and shorter for the solid or semi-solid foods usually worked in a food processor. The use of a food processor reduces the large amount of time spent in the kitchen with chopping, shredding and mixing of ingredients. Cuisineart, KitchenAid, Hamilton Beach etc are the manufacturers of food processors. Insulated Gate Bipolar Transistors are employed in the power circuits used for the operation of the food processor. The AC input power is first rectified by a diode bridge to create a DC bus with a capacitor. The permanent magnet DC motor used in the food processor is then driven by an IGBT controlled chopper. The high input impedance of the IGBT allows its control with a microprocessor that can be programmed to perform various functions. This creates a compact, low-cost design suitable for the consumer market. Home appliances were an early adopter of the IGBT technology because it enhanced the simplicity and flexibility of design while deriving more functionality. Read more >>

Plasma cutting is a procedure for cutting metal (mainly steel) of various sizes and thickness using the plasma torch. This plasma torch is adequately hot to melt the metal that is cut and it also moves quickly to blow the metal far from the present cut. Plasma arc cutters deploy the Insulated Gate Bipolar Transistor (IGBT) plasma cutting technology to provide more commercial plasma cutting equipment. The IGBT plasma cutters take up a different method to start the pilot arc and are better suited for professional environments. Many IGBT plasma metal cutters often deploy high frequency starting technology, high voltage circuit just for the starting process while others use Pilot Arc starting technology, where the torch enables a constant arc without touching the work piece. The Insulated Gate Bipolar Transistor (IGBT) versus the Metal Oxide Semi-conductor Field Effect Transistor (MOSFET) has been a controversial subject ever since the IGBT technology came into being in the 1980s. IGBT technology for welding applications has certainly proved to more effectively handle the rigorous demands the high duty cycles welders as it offers higher voltage capacities and heat tolerances than the earlier MOSFET. Read more >>

Solar power has a large potential to provide the electricity needs of the world’s burgeoning population. However, in 2008, solar-power supplied less than 0.02% of the total energy supply in the world. In a solar or photovoltaic cell, the incident sunlight is converted into an electrical current using the photoelectric effect within semiconductor. The typical silicon P-N junction produces the current at a DC voltage of about 0.8 volts. Many such junctions must be placed in series and parallel to create a solar panel with sufficient power generation capability for use in homes or power delivery systems. Typical solar panels may produce hundreds of watts of power at a DC voltage of about 300 volts. The DC voltage produced by the solar array must be converted into a desired well regulated AC power by using an IGBT-based inverter. IGBTs deliver low conduction and switching losses resulting in high inverter efficiency. Many companies have developed IGBT products specifically targeted for the solar inverter application. Some examples of IGBT products tailored for solar inverter applications are the Microsemi ‘APTGV30H60T3G’, International Rectifier ‘IRG4PC40UDBF’, Infineon ‘EconoDual IGBT’ etc. Read more >>

It is now well-known that the IGBT enabled introduction of cost effective and reliable compact fluorescent lamps. This allowed the replacement of incandescent bulbs to provide a typical power savings of 45 watts for a 60 watt bulb. Based upon this power savings, the total reduction of electricity power consumption in the U.S. and the world between 1990 and 2010 is very noticeable. The reduction of carbon dioxide emissions in pounds per year due to this reduced electricity power consumption can be computed by multiplying the data in these figures by rate of carbon dioxide emission per kWh of electricity generated by typical power plants. The Environmental Protection Agency has analyzed the carbon dioxide emission from various types of power plants. Electricity is generated mostly (51 percent) from Coal-fired power plants in the United States. Unfortunately, the carbon dioxide emission from coal-fired power plants is the highest among the power generation options. The average carbon dioxide emission per kWh generated in the U.S. is 1.350 pounds. This value will therefore be used in the computation of carbon dioxide emission reductions resulting from IGBT-enabled compact fluorescent lamps. The reduction of carbon dioxide emissions due to the availability of IGBT-based compact fluorescent lamps obtained by multiplying the energy savings per year in kWh by 1.35 pounds/kWh. Read more >>

Magnetic resonance imaging (MRI) is an important diagnostic tool commonly used in hospitals to determine the nature of injuries and status of organs in patients. Unlike CT scans, no radiation occurs when using an MRI procedure. In an MRI machine, a powerful magnetic field is used to align the magnetization of some atoms in the body, and radio frequency fields are used to systematically alter the alignment of this magnetization. The nuclei in selected atoms produce a rotating magnetic field detectable by the scanner which is used to construct an image of the scanned area of the body. MRI is especially useful in imaging the brain, muscles, heart, and cancers compared with other medical imaging techniques such as computed tomography (CT) or X-rays. It can detect aneurysms, damage to the heart or blood vessels, torn ligaments, and to find tumors. Commencing medical diagnostic equipments has revolutionized the quality of care for mankind. Non-invasive imaging of the interior of the body enables the surgeon to perform operations while minimizing damage to adjacent tissue and organs. The IGBT has been used since the early deployment of MRI scanners for the control of the gantry on which the patient is reclining as described below. In addition, hundreds of thousands of lives are being saved due to the availability of portable defibrillators which require IGBTs for delivering the controlled shock to the patient of cardiac arrest. Read more >>

Electric automatic washing machines are now common in homes for the cleaning of daily household laundry. Washing machines were developed to eliminate the drudgery of scrubbing and rubbing to remove dirt from clothes. Electric washing machines were advertised and discussed in newspapers as early as 1904. The first automatic washing machine was introduced by Bendix in 1937. Sixty percent of the 25 Million wired homes in the United States had an electric washing machine by 1940. The annual sales for washing machines have grown to more than 58 million units worldwide by 2003. Many of these units are front loaders. Early automatic washing machines utilized mechanical means for making any changes in impeller/drum speed. Since the 1970s, electronic control of motor speed has become a common feature of most washing machines. Modern automatic washing machines provide many sophisticated features to handle the safe cleaning of a wide range of fabrics with a variety of soil removal requirements. The soil removal in an automatic electric washing machine is performed by a process of agitation of the clothes. The agitator is controlled using IGBT-based motor control modules. The direction of rotation of the motor and its speed can be regulated by using the power delivered via the IGBTs. Inverter control with IGBTs reduces wash/spin noise and vibration, and enables adjustment of the amount of water and motor torque to suit the washing load. Read more >>

Metal-Oxide Semiconductor Field Effect Transistor (MOSFET) and Insulated Gate Bipolar Transistor (IGBT) are the two most popular versions among various types of switch-mode power supply (SMPS) transistors are available today. It has been observed that MOSFETs are suitable for low-voltage, low-current and high switching frequencies. On the other hand, IGBTs are favorable for high-voltage, high-current and low switching frequencies. There may be an argument that on which device works better in SMPS applications, the fact is this: there’s no common norm to specify which device performs better in a particular category of circuit. It differs from application to application, and a wide range of factors, such as speed, size, and cost, all play a role to ordain the exact choice. Now we are going to enlighten on the differences between these two transistors rather than say that one is better than the other straight away. The MOSFET is a three-terminal fully-controlled switch. Gate, drain and source are its three terminals. The gate/control signal occurs between the gate and source, and its switch terminals are the drain and source. The gate itself is made of metal. A metal oxide separates it from the source and drain. This grants for reduced power draining and makes MOSFET an excellent option to use as an electronic switch or common-source amplifier. To operate satisfactorily, a positive temperature coefficient has to be sustained by MOSFETs. As a result of this, there’s little-to-no chance of thermal runaway. On-state losses are lower because the transistor’s on-state-resistance, theoretically speaking, has no limit. Also, MOSFETs can carry through fast switching applications with little turn-off losses because they can function at high frequencies. The IGBT is also a three terminal (gate, collector, and emitter) full-controlled switch. Its gate/control signal takes place between the gate and emitter, and its switch terminals are the drain and emitter. The IGBT puts the common gate-drive feature found in the MOSFET with the high-current and low-saturation-voltage capability of a bipolar transistor at the same time. It does this by utilizing an isolated gate field effect transistor for the control input, and a bipolar power transistor as a switch. Turning on and off rapidly are the specific characteristics of IGBT. Actually its pulse repetition frequency really gets into the ultrasonic extent. This identical ability is why IGBTs are frequently implemented in amplifiers to synthesize complex waveforms with pulse width modulation and low-pass filters. IGBTs are also used to yield big power pulses in fields like particle and plasma physics, and have set up a role in modern appliances like electric cars, trains, elevators, refrigerators, vacuum cleaner etc. These transistors are very similar in terms of structures. When it comes to electron current flow, a significant difference is the addition of a p-substrate layer beneath the n-substrate layer in the IGBT. In this extra layer, holes are injected into the highly-resistive n-layer, generating a carrier overflow. This increment in conductivity within the n-layer assists to lessen the total on-state voltage of the IGBT. Unfortunately, it also obstructs reverse current flow. As a result, an extra diode (often referred to as a “freewheeling” diode) gets placed parallel with the IGBT to conduct the current in an inverse direction. Read more >>

The IGBT has a major impact on the transportation sector in all over the world. It enabled the introduction of cost effective and reliable electronic ignitions systems that have improved gasoline fuel efficiency by at least 10 percent. They have also been critical elements in the improvement of mass transit systems and the deployment of electric and hybrid electric vehicles. Modern mass transit systems rely up on electric trains where the propulsion is derived from supplying AC power to motors. High speed rail, such as the European TGV and the Japanese Shinkansen bullet trains allows travel by large numbers of people while avoiding fossil fuel consumption experienced with gasoline powered automobiles and aircraft. Until the 1990s, the silicon GTO was the only available power semiconductor switching device with the power handling capability suitable for this application. In the 1990s, the ratings of IGBTs had sufficiently advanced, to exceed one Mega-Watt allowing penetration of the IGBT into this traction market. The availability of the IGBT allowed significant improvements in the motor drive technology due to elimination of snubber circuits and an increase in the operating frequency of the inverter circuit used to deliver power to the motors. Mass transit systems within cities must rely upon a busses, trams, and underground trains. Many cities have been replacing gasoline powered busses with electric busses and trams to reduce urban pollution. All of these below requirements were met by using the IGBT-based motor drive in control system for the electric transit bus: (a) wide range of speed including high operating speed; (b) large startup torque for good acceleration; (c) high efficiency; and (d) regenerative braking to increase utilization of batteries. In Europe and Japan, electric tram transit systems have been modernized by using IGBT-based motor drives. According to AEG-Westinghouse Transport Systeme, Germany, the low floor concept is becoming a standard customer prerequisite. This has been enabled by today’s IGBT modules. Read more >>

El informe de transformadores convertidores, tiristores y ventas de IGBT resume las tendencias y pronósticos de la industria pasada, presente y futura que se pueden utilizar para estudiar el transformador convertidor, los ingresos de ventas de tiristores e IGBT, el transformador convertidor, el crecimiento de ventas de tiristores y IGBT, el transformador convertidor, Tiristores y IGBT Plan de demanda y suministro de ventas. Además, este documento de investigación destaca las oportunidades, los riesgos y las amenazas que también están cubiertos para el progreso del mercado de transformadores convertidores, tiristores y ventas de IGBT en profundidad. Principalmente, este informe cubre el transformador Convertidor, Tiristores y IGBT Análisis de fabricación de ventas de los principales actores de la industria en función de sus perfiles de empresa, ingresos anuales, margen de ventas, aspectos de crecimiento que serán de gran ayuda y resultarán valiosos para el transformador Convertidor ascendente , Thyristor e IGBT Sales comercializan a los jugadores para impulsar el negocio y tener una visión de negocios basada en hechos para tomar las decisiones comerciales correctas. Puntos clave del transformador convertidor, tiristor y mercado de ventas de IGBT: El informe de la industria de ventas de transformadores convertidores, tiristores e IGBT cubre básicamente los detalles relacionados con la industria de ventas de transformadores convertidores, tiristores e IGBT, como la definición del producto, el costo, la variedad de aplicaciones y las estadísticas de demanda y suministro. Un estudio agresivo y riguroso de los reproductores de transformadores convertidores, tiristores e IGBT Sales ayudará a todos los actores del mercado a analizar las tendencias recientes y las estrategias comerciales clave. Este estudio competitivo y en profundidad del transformador convertidor, tiristores y el mercado de ventas de IGBT pronosticará el crecimiento del mercado en función de las oportunidades de desarrollo, los factores de crecimiento y la viabilidad de la inversión. La planificación de estrategias comerciales segmentando el transformador convertidor, tiristores e IGBT. Los segmentos de la industria de ventas y los segmentos de mercado existentes serán sencillos y también serán útiles para los lectores del mercado de transformadores convertidores, tiristores y ventas de IGBT. Read more >>

One of the every four deaths in the advanced world takes place because of cardiac arrest. Eighty-five percent of deaths from sudden cardiac arrest occur due to ventricular fibrillation. Without synchronization of heart muscles, blood flow through the body is interrupted leading to starving oxygen from organs. The victim will almost certainly die within 10 minutes unless aid is provided. A defibrillator applies a dose of electrical energy to the heart muscles which depolarizes a critical mass of the heart muscle, terminates the arrhythmia, and allows normal heart rhythm to be re-established. It is essential that the defibrillator be located close to the victim and be easily operated to provide the life-saving response within 10 minutes. Automated external defibrillators (AED) are now widely deployed in places such as corporate and government offices, shopping centers, airplanes, airports, restaurants, hotels, sports stadiums, schools and universities with a high density of aging populations. The automated external defibrillator is designed to provide simple voice commands to prompt the administration of the live-saving electrical jolt to the victim. According to USA Today, about 450,000 people die each year in the U.S. from sudden cardiac arrest. Among these victims, the American Medical Association (AMA) estimates that more than 100,000 lives can be saved by the availability of modern AEDs enabled by IGBTs. Many companies have made IGBT particularly customized for the implantable defibrillator market. Read more >>

Tesla Roadster is the first high-performance electric car in the world. It is very speedy, unprecedented; handles like a dream and goes like a bullet. But it doesn’t consume a single drop of gasoline and practically noiseless. Traditional gasoline-powered car contain hundreds of moving parts. But the Roadster is powered by just four main systems. These are: The Energy Storage System (ESS), The Power Electronics Module (PEM), an electric motor and a sequential manual transmission. We will talk about the power electronics module below. The Roadster battery, as with all batteries, stores electricity at a DC voltage. The motor uses energy in the form of an AC voltage. The Power Electronics Module functions as a bridge for energy between the charge port, battery, and motor. Every electron ever used in a Roadster, from the motor drive to the dome light, flows through the Power Electronics Module. It is a power inverter and charging system that converts AC voltage from the grid at between 90V and 265V, into DC voltages between 250V and 425V using 72 insulated gate bipolar transistors (IGBTs). This lead a significant increase in power output likened to first-generation electric cars. Under peak acceleration, the batteries can provide 200 kW of energy -- sufficient to power 2,000 incandescent light bulbs. Along with controlling charge and discharge rates, the Power Electronics Module controls voltage levels, the motor RPM (revolutions per minute), torque and the regenerative braking system. Read more >>

Insulated Gate Bipolar Transistor (IGBT) is a relatively new device which is noted for its high efficiency and fast switching, making it ideal for applications where saving energy and protecting the environment are important factors. Consequently, IGBTs are found in hybrid vehicles and electric vehicles, in wind turbines and solar installations, as well as in smart grids and modern household appliances, such as refrigerators and air-conditioning systems. Although the automotive market is relatively small, the number of electronic components in automobiles is steadily rising. Hybrid and electric vehicles have the highest share of electronic devices. They need IGBTs for power control. The power control unit (PCU) in these cars regulates the transfer of energy between the battery and electric motor. Such PCUs can contain up to 20 IGBTs. IGBT usage in the car industry is expected to grow around 70 percent in 2015. When a hybrid-electric car is operated on highways, it operates with power delivered from both the gasoline-powered Internal Combustion Engine (ICE) and the battery-powered electric motor. In this case, IGBTs are needed to operate the ignition system of the ICE and to drive the motor. The battery in the hybrid-electric car must be recharged to renew the stored energy. This is also performed using IGBT-based circuitry in the power electronics module. In conclusion, the availability of IGBTs has been crucial to the success the hybrid electric car and to the deployment of the charging infrastructure for the plug-in electric vehicles. The IGBT will continue to play an important role in the availability of cost effective technology for the entire electric vehicle industry. Read more >>

Numerical control (NC) is the mechanization of machine tools that are functioned by accurately programmed commands encoded on a storage mean, as against to run manually via hand wheels or levers, or mechanically automated via cams alone. Most NCs today are computer numerical control (CNC), in which computers play an integral part of the control. Fuji Electric delivers high-performance power semiconductors for energy, automotive, information technology, and industrial applications. IGBTs (Insulated Gate Bipolar Transistor) made my Fuji is used widely in CNC plasma cutters and welding machines. Plasma cutting involves cutting a material using a plasma torch. It is commonly used to cut steel and other metals, but can be used on a variety of materials. In this process, gas (such as compressed air) is blown at high speed out of a nozzle; at the same time an electrical arc is formed through that gas from the nozzle to the surface being cut, turning some of that gas to plasma. The plasma is enough heated to melt the material being cut and moves pretty fast to blow molten metal away from the cut. Arc and tube welding machines are mostly used in industrial setting for building and repair of the infrastructure. Welding power supplies are required to create an electric arc between an electrode and the base material to melt the metals at the welding point. The arc can be created by either DC or AC current with consumable or non-consumable electrodes. The welding region is sometimes protected by some type of inert or semi-inert gas. Arc welding is popular due to low capital and running costs. For arc welding, the voltage is directly related to the length of the arc, and the current is related to the amount of heat input with typical currents of 50 to 500 amps depending on the size of weld. For arc welding with low voltages and large currents, a soft switching PWM DC-DC power converter with Fuji IGBT switches in the primary side of a high frequency transformer is considered to be the most suitable topology for the welding power supply110, 111. Power losses in the Fuji IGBTs are reduced by using soft switching resulting in a volume reduction of 59% and weight reduction of 47% compared with the hard-switching approach. Dynamic welding performance is improved due to operation at 40-kHz when compared with 13-kHz with hard-switching. We have been selling IGBT power transistor modules since 2001. Thyssen Krupp, OTIS, IXYS, SONY DADC, General Motors, Hongkong Electric Holdings Limited, Singapore Mass Rapid Transit Trains LTD, Verkehrsbetriebe Zurich, Czech Airlines, Molex, Cisco, Omron, Good Year Tires, Thai Airasia, Boeing, Xilinx, LEAR SIEGLER, and General Electric. We have a Quality Control Team like no other. This means that we know how to work hard in order to ensure to make sure that the quality of all of the parts we’re selling is high. Because we only sell new and original electronic parts, we provide our customers with a 30-day warranty. And because we have connections with IGBT power transistor modules manufacturers, OEMs and distributors, we’re able to pass any savings on to our customers, giving them a lower price while still providing them with the quality products they deserve. Our inventory is carefully managed and held to the highest standards, and stored in a controlled environment warehousing facility. Read more >>

IGBTs (Insulated Gate Bipolar Transistor) are widely used now-a-days in the transportation, renewable power generation, consumer, aircrafts, medical, industrial and financial sectors all over the world. As a result, billions of people from around the globe are enjoying enhanced comfort, convenience, and quality of life. IGBTs are known for their fantastic efficiency and speedy switching characteristics. These qualities make IGBTs very suitable for applications where saving energy and protecting the environment are very important. What would happen if all the IGBT were removed from the applications that they serve today?” The answer is quite revealing: Our new solar and wind based renewable energy sources would not be able to deliver power to the grid because the inverters would stop functioning. Our gasoline power cars would stop running because the electronic ignition systems would no longer function. Our hybrid electric and electric cars would stop running because the inverters used to deliver power from the batteries to the motors would no longer function. Our electric mass-transit systems would come to a standstill because the inverters used to deliver power from the power-grid to the motors would no longer function. Our air-conditioning systems in homes and offices would stop working because the inverters used to deliver power from the utility company to the heat-pumps and compressors would no longer function. Our refrigerators and vending machines would no longer function making the delivery and storage of perishable products impossible. Our factories would come to a grinding halt because the numerical controls use to run the robots would cease to function. Our new low-energy compact fluorescent bulbs would stop functioning limiting our activities to the daytime. Our portable defibrillators recently deployed in emergency vehicles, on-board airplanes, and in office buildings would no longer be operational putting over 100,000 people at the risk of death from cardiac failure. In one statement, the quality of life in our society would be greatly deteriorated if the IGBT is no longer available. It is a blessing of modern science. Read more >>

IGBTs are state-of-the-art power electronics for the traction system of electric and diesel-electric rail vehicles. The main benefit of IGBT is that it reduces the requirement for current, minimizing heat and traction noise while also making the acceleration process efficient. Automations solutions provider Siemens Limited has bagged the contract to install state-of-the-art IGBT technology for Indian Railways. The company will be designing, supplying and installing alternating current (AC) traction systems for dual cab high horsepower diesel engine locomotive for diesel locomotive works (DLW). "The systems have been developed based on the state-of-the-art insulated gate bipolar transistors (IGBT) technology. The AC traction systems will be produced at its factory at Nashik, Maharashtra, India" the company said. Read more >>

For a power semiconductor device, usually widely used as a switch or rectifier in power supply applications, one of its particularly important requirements relates to the characteristic of breakdown voltage to endure high voltage. As devices in such applications evolve, a great deal of efforts has been paid to boast the breakdown voltage. The fruit of such efforts is an IGBT, gradually gaining wider applications for modern devices and appliances due to its various advantages. The IGBT is an element combining advantages of MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) structure as well as advantages of BJT (Bipolar Junction Transistor) structure. Combined with fast switching characteristic of the MOSFET along with high-current and low-saturation-voltage capability of the BJT, the IGBT expands its scope of applications such as display, automobile, motor and household appliances. Breakdown voltage under the high voltage environment is a key characteristic required in the IGBT, which is therefore designed by implementing an edge-termination structure — called edge termination region — in the lateral side of its junction so as to alleviate the electric field in the junction edge. Read more >>

Thyristor and IGBT (Insulated Gate Bipolar Transistor) are two types of semiconductor devices with three terminals and both of them are used to control currents. Both devices have a controlling terminal called ‘gate’, but have different principals of operation. Thyristor is made of four alternating semiconductor layers (in the form of P-N-P-N), therefore, consists of three PN junctions. In analysis, this is considered as a tightly coupled pair of transistors (one PNP and other in NPN configuration). The outermost P and N type semiconductor layers are called anode and cathode respectively. Electrode connected to inner P type semiconductor layer is known as the ‘gate’. In operation, thyristor acts conducting when a pulse is provided to the gate. It has three modes of operation known as ‘reverse blocking mode’, ‘forward blocking mode’ and ‘forward conducting mode’. Once the gate is triggered with the pulse, thyristor goes to the ‘forward conducting mode’ and keep conducting until the forward current become less than the threshold ‘holding current’. Thyristors are power devices and most of the times they are used in applications where high currents and voltages are involved. The most used thyristor application is controlling alternating currents. IGBT is a semiconductor device with three terminals known as ‘Emitter’, ‘Collector’ and ‘Gate’. It is a type of transistor, which can handle a higher amount of power and has a higher switching speed making it high efficient. IGBT has been introduced to the market in 1980s. IGBT is has the combined features of both MOSFET and bipolar junction transistor (BJT). It is gate driven like MOSFET and has current voltage characteristics like BJTs. Therefore, it has the advantages of both high current handling capability and ease of control. IGBT modules (consists of a number of devices) handle kilowatts of power. Read more >>

IGBTs are a crucial part in high-efficiency electrical power transformation systems used in variable-speed motor drives, uninterruptible power supplies, power grids, trains, renewable power plants and electric and hybrid electric vehicles. A $240m IGBT (Insulated Gate Bipolar Transistor) manufacture plant has been established by Zhuzhou CSR Times Electric Co, a semiconductor maker from China. The company has done this by comprising technology enhanced by Dynex Semiconductor, its supplementary in the United Kingdom. This plant is mentioned to be the first of its category in China and the second all over the world. Using eight-inch silicon wafers, high performance IGBT modules and chips are produced in this factory which is located in Zhuzhou. Output is 120,000 wafers and 1 million IGBT modules every year in the first stage of the operation. Over two years were needed by the latest production line to be built. Technical advice, support, staff training were provided by Dynex throughout this process, both in China and in Lincoln. Read more >>

For locomotives, which are driven by diesel or electricity, EMU and DEMU vehicles with AC Traction Motors, new microprocessor based AC-AC Traction System (MAS) offers the latest in technology combining IGBT based Traction Converter with DSP and microprocessor based embedded controls. Microprocessor based Locomotive Control system is used in conjunction with IGBT based traction converter to implement this solution. Federal Railway of Switzerland has granted ABB Switzerland an agreement valued approximately SFr 69.2m ($US 75.4m) to provide latest traction apparatuses for its convoy of 119 Re460 electric locomotives as a section of a SFr 230m middle-life renovation program. According to this contract, 202 IGBT traction converters will be supplied by ABB with an option for 38 additional units which are water-cooled. As per SSB’s opinion, it will be possible to reduce traction power consumption by 27GWh per year by converting the convoy to IGBT which is sufficient electricity to power 6750 homes. Read more >>

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Marcas de renombre como Sharp, ABB, Toshiba, Microchip, Vishay, IXYS, Renesas, SEMIKRON, Texas Instruments se hacen presentes en un info8rme detallado de MOSFET e IGBT Gate Drivers qu8e define todas las terminologías industriales o comerciales importantes. Los expertos de la industria han realizado un esfuerzo consciente para describir diversos aspectos, como el tamaño del mercado, la participación y la tasa de crecimiento. Aparte de esto, el valioso documento pesa sobre el desempeño de la industria en base a un servicio de producto, uso final, geografía y cliente final. Los principales proveedores de MOSFET e IGBT Gate Drivers Market qu8e incluyen Infineon Technologies, Texas Instruments, ON Semiconductor, STMicroelectronics, IXYS, Fairchild Semiconductor, Powerex (Mitsubishi Electric) ), Renesas, SEMIKRON, Vishay, Analog Devices, Microchip, ROHM Semiconductor, Broadcom, Sharp, ABB, Toshiba, tecnología Lite-On, Microsemiconductor, Power Integrations, Inc., Beijing LMY Electronics. El estudio mas reciente de, MOSFET e IGBT Gate Drivers Market, fundamentalmente descubre ideas que les permiten a las partes interesadas, propietarios de negocios y ejecutivos de marketing de campo tomar decisiones de inversión efectivas basadas en hechos, en lugar de conjeturas. El informe que estudia el campo de rendimiento y mercadeo tiene como objetivo escuchar, analizar y entregar datos procesables sobre el panorama competitivo para cumplir con los requisitos únicos de las empresas y personas que operan en el mercado MOSFET e IGBT Gate Drivers para el período de pronóstico, 2018 a 2025. Permitir que las empresas entiendan el MOSFET & IGBT Gate Controladores de la industria de varias maneras el informe evalúa minuciosamente la cuota, el tamaño y la tasa de crecimiento de la empresa en todo el mundo. A su vez explorando cómo se verán los futuros controladores MOSFET e IGBT Gate Drivers. Lo más importante es que la investigación familiariza a los propietarios de los productos con los competidores inmediatos y lo que los compradores esperan y cuáles son las estrategias comerciales efectivas adoptadas por los líderes prominentes. Para ayudar tanto a las empresas establecidas como a los nuevos participantes, no solo vea la interrupción, sino también vea las oportunidades. Una exploración en profundidad de cómo se comporta la industria, incluida la evaluación de los organismos gubernamentales, la organización financiera y otros organismos reguladores. Comenzando con una perspectiva macroeconómica, el estudio profundiza en las subcategorías de la industria y la evaluación de las tendencias que influyen en el negocio Read more >>

Análisis de crecimiento de los IGBT hasta el 2023 anuncia desarrollo exponencial El análisis hasta el año 2023 de una industria es una cuestión crucial para varias partes interesadas, como inversores, directores generales, comerciantes, proveedores y otros. Se ha incluido también un análisis profundo sobre el estado del mercado, el patrón de competencia empresarial, las ventajas y desventajas de los productos empresariales, las tendencias de desarrollo de la industria, las características regionales de diseño industrial y las políticas macroeconómicas, la política industrial. IGBT es la abreviatura de Transistor Bipolar de Puerta Aislada. Es un transistor de potencia con una estructura MOS para una parte de entrada y una bipolar para una parte de salida. Adecuado para alta tensión y alta corriente, es capaz de controlar alta potencia con menos potencia de accionamiento. Competencia del mercado por parte de los principales fabricantes , con volumen de ventas de mercancia , Precio (USD / Unidad), ingresos (Millones USD) y cuota de mercado para cada fabricante / jugador; los mejores manufactureros incluyen: Mitsubishi Electric, Infineon Technologies, Fuji Electric, SEMIKRON, Hitachi, ABB, ON Semiconductor (Fairchild Semiconductor), Renesas Electronics, CRRC, Toshiba, STMicroelectronics, ROHM Semiconductor, Starpower Semiconductor. Según el tipo de producto, el informe de mercado de IGBT muestra la producción, los ingresos, el precio, la cuota de mercado y la tasa de crecimiento de cada tipo, y abarca: Módulo IGBT IGBT discreto Sobre la base de los usuarios / aplicaciones finales, el informe de mercado de IGBT se centra en el estado y las perspectivas de las principales aplicaciones / usuarios finales, el volumen de ventas, la cuota de mercado y la tasa de crecimiento de cada aplicación, esto se puede dividir en: Discos industriales Consumidor Automotor Renovables Tracción Otros Read more >>

Este informe proporciona pronósticos precisos para el año 2021 por parte de los ingenieros en el mercado así como también la opinión de expertos de fuentes creíbles, y el reciente desarrollo de I + D en la industria que actualmente funge como una columna vertebral del informe de la industria IGBT. Para la ayuda de los nuevos participantes en este mercado tecnológico, este informe ofrece un escenario competitivo de la industria IGBT con tendencias de crecimiento, estructura, factores impulsores, alcance, oportunidades, desafíos, análisis de paisaje de proveedores, etc. informe. Se prevé que el mercado mundial de IGBT aumente a una tasa estable y obtendra una CAGR (tasa de crecimiento anual compuesto) del 11,5% durante 2017-2021. Preguntas clave respondidas en el informe de mercado de IGBT: ¿Cuál será el abarcamiento total hasta el 2012 y cuál será la tasa de crecimiento? ¿Cuáles son las tendencias clave del mercado? ¿Qué está impulsando este mercado? ¿Cuáles son los desafíos para el crecimiento del mercado de IGBT? ¿Quiénes son los proveedores clave en este mercado? ¿Cuáles son las oportunidades de mercado y las amenazas que enfrentan los proveedores clave? ¿Cuáles son las fortalezas y debilidades de los proveedores clave? Al final, nuestro informe de mercado IGBT, es el resultado de la dedicación de nuestros expertos a la información que puede ser útil para todos. Read more >>