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Press Release

21

September 2020

Fuji Electric Announces New IPM Modules

Fuji Electric Announces New IPM Modules Fuji Electric Corp has added the newest Small Intelligent Power Module (IPM) as part of new 7th Generation X-Series Portfolio The latest Fuji IPM modules come with a control IC providing IGBT drive and protection circuits, making the design of peripheral circuits straightforward and ensuring high system reliability. This new P642 IPM features a product line-up ranging from 50A to 75A at 650V expanding the 15A to 35A at 600V range of the P633A IPM. All Fuji Electric Dual-In-Line Small IPMs come equipped with overcurrent protection, short circuit protection, control power voltage drop protection, and overheating protection, while also outputting alarm signals. “Fuji Electric continues to expand our offering in the dual-in-line small IPM market and the new P642 series is our latest offering expanding our range to 75A” said James Usack, Division General Manager Electronic Devices Division. Fuji Electric Corp. of America is a wholly owned subsidiary of Fuji Electric Co., Ltd., headquartered in Tokyo, Japan and has been responsible for sales and distribution of the company’s products since 1970. Fuji Electric Co., Ltd. began developing power electronics equipment in 1923, and is a global leader in industrial products ranging from semiconductors, HMIs, contactors, relays, and power generation equipment to AC drives and uninterruptible power supply systems.

20

July 2020

Mitsubishi Electric to Expand Lineup of IGBT T series with 7th Generation IGBT

Mitsubishi Electric Corporation announced today that it would begin shipping 17 new models of T series power semiconductor modules featuring seventh-generation insulated-gate bipolar transistors (IGBTs). The new modules have a 1.7kV rating and realize improved power loss and reliability for general-purpose inverters, uninterruptible power supplies (UPS), photovoltaic (PV), wind power-generation systems and other industrial equipment. Product Features include 1) Expanded lineup of 17 models with 1.7kV rating provides for wide range of inverter capacity. 2) Reduced power loss thanks to seventh-generation IGBT and diode. 3) Latest package technology enhances reliability of de facto standard package.

20

July 2020

China’s Hopewind selected ABB’s LoPak IGBT modules

China’s Hopewind selected ABB’s LoPak modules After two years of stringent testing and one year of field operations, it finally paid off. ABB’s LoPak IGBT module is now qualified by one of the world’s leading wind power converter manufacturers. Hopewind Electric Co., Ltd based in Shenzhen, China. is scheduled to take volume delivery of LoPak 1700 V / 450 A ABB medium power IGBT modules for use in wind converter applications operating between 1.5 to 2.5 MW (megawatt). This follows a successful collaboration between Hopewind, Sunking (distribution partner in China) and the ABB Power Grids team in Lenzburg, Peking and Manila. The company´s current production phase will generate up to 2,000 MW using wind power, a capacity equivalent to the needs of one million of Swiss households.

16

July 2020

Infineon EconoDUAL IGBT Modules

ECONODUAL3 Infineon Technologies AG just introduced the new IGBT7 chip for its well-known Easy housing platform. Now it is taking the state-of-the-art TRENCHSTOP IGBT7 to the arena of medium power: in the standard industry package EconoDUAL 3. In this chip technology, the 1200 V module provides a leading nominal current of 900 A enabling a 30 percent higher inverter output current for the same frame size compared with the former technology. it can also be used in construction, commercial and agricultural vehicles (CAV), servo drives, as well as UPS and solar inverters. Improving the already new micro-pattern trench technology, the TRENCHSTOP IGBT7 chip performs with much lower static losses compared to the IGBT4. Its on-state voltage is reduced by up to 30 percent for the same chip area. bringing significant loss reduction in the application, for industrial drives this is ideal as they usually operate at moderate switching frequencies. The oscillation behavior and the controllability of the IGBT have been improved. The power modules feature a maximum allowed overload junction temperature of 175°C. Among the other improvements there is the freewheeling diode (FWD) which has also been optimized for drive applications. The forward-voltage drop of the emitter-controlled 7th generation diode (EC7) is now 100 mV lower than the forward-voltage drop of the EC4 diode, with reduced oscillation tendency during diode turn-off, the future looks bright for this kind of technology.

1

July 2020

MERCADO DE LOS IGBT EN TIEMPOS DE COVID 19

Actualmente y debido a las duras condiciones, los principales fabricantes y distribuidores del mercado han comenzado a cambiar sus estrategias comerciales para mantener su posición en la plataforma . El estudio de investigación sobre el mercado global de controladores de puerta MOSFET e IGBT aborda el estado actualizado de la situacion desde el punto de vista de comercializacion y fabricacion, asi como tambien los nuevos lanzamientos. Algunos de los mas relevantes que operan en el mercado de incluyen Infineon Technologies, ON Semiconductor, STMicroelectronics, ROHM Semiconductor, NXP Semiconductors, Texas Instruments, Microchip, Power Integrations, Inc., Vishay, Broadcom, Analog Devices, IXYS, Toshiba, Renesas, Powerex, entre eotras. El dossier incluye un perfil detallado de todos los fabrficantes en la industria. Los analistas han realizado investigaciones primarias y han incluido todos los desarrollos recientes que las organizaciones de esta indole están tratando de resolver en esta situación de COVID-19. Los mercados mundiales han experimentado un gran cambio en los últimos meses. Estos cambios se debieron al brote de la pandemia que se detectó por primera vez en la ciudad china de Wuhan. COVID19, que se produjo debido al coronavirus, ha cobrado muchas vidas de personas en todo el mundo. A medida que la enfermedad se propaga a un ritmo acelerado, muchos países han ordenado el cierre puntual para mantener el distanciamiento social. Debido al bloqueo, muchas de las industrias han detenido sus unidades de fabricación. Ha habido restricciones para el comercio transfronterizo dentro de las ciudades y también dentro de los estados. Debido a estas condiciones comerciales en varias regiones se han visto gravemente afectadas. En general, todos los países enfrentan una crisis económica que afecta a algunos de los principales mercados del mundo. Se utilizaron diversas metodologías y herramientas de investigación para obtener estadisticas confiables del desarrollo economico y tecnologico del MOSFET & IGBT Gate Drivers. El informe de mercado MOSFET & IGBT Gate Drivers incluye los datos históricos de 2016-2019 y las previsiones de 2020-2026. Se tomó una consideración especial para los años 2019 y 2020 ya que en estos dos años el entorno experimentó cambios importantes en la plataforma global. El target de controladores de compuerta MOSFET e IGBT se segrega en los siguientes segmentos {Controladores de compuerta de un solo canal, Controladores de compuerta de medio puente, Controladores de compuerta de puente completo, Controladores de compuerta trifásica, Otros}; {Electrodomésticos, automoción, pantallas e iluminación, fuente de alimentación, otros}. Algunos de los principales segmentos también fueron subsegmentados para un mejor análisis de mercado. La información numérica para todos los segmentos se investigó y se obtuvo a través de una investigación primaria y secundaria exhaustiva y se aclararon los datos con la ayuda de los expertos del mercado. La presencia regional del mercado MOSFET & IGBT Gate Drivers también se incluye en el informe de mercado MOSFET & IGBT Gate Drivers. Click here to visit this press release in our Youtube channel.

11

May 2017

Global IGBT & Thyristor Market 2017

Global IGBT & Thyristor Market 2017 - Fairchild Semiconductor, Semikron, Hitachi, Mitsubishi Electric, Infineon Deerfield Beach, FL -- (SBWIRE) -- 03/15/2017 -- The Global IGBT & Thyristor Market 2017 Industry Research Report is a in-depth study and professional analysis on the current state of the IGBT & Thyristor market. IGBT & Thyristor Market Report Details: Firstly, Worldwide IGBT & Thyristor Market report provides a basic overview of the IGBT & Thyristor industry including classification, definitions, Key vendors, Growth Drivers, Competitive Landscape, Regional Analysis and IGBT & Thyristor industry chain structure. Global IGBT & Thyristor Market analysis is provided for the international industry including company development history, IGBT & Thyristor market competitive landscape, Regional analysis and major regions development status on industry Market scenario. Secondly, IGBT & Thyristor Market report includes, development policies and plans are discussed, manufacturing processes and cost structures. This IGBT & Thyristor Industry report also states import/export, supply and consumption figures as well as cost, price, Global IGBT & Thyristor Market revenue and gross margin by regions (South East Asia, India, North America, Europe, Japan and China) and also other can be added. Then, the report pay attention on worldwide major leading market players (in IGBT & Thyristor industry area) with information such as Company Profile, Sales Volume, Price, Gross Margin and contact information. Global IGBT & Thyristor Industry report also includes Upstream & downstream consumers analysis, raw materials. http://www.uscomponent.com